硅微通道阵列高温氧化及整形技术研究

发布时间：2018-04-18 03:25

  本文选题：硅微通道阵列 + 厚层氧化　； 参考：《长春理工大学》2015年硕士论文

【摘要】：基于硅微通道阵列厚层氧化机理,对n型100晶向硅微通道阵列进行了不同时间的湿氧氧化,用扫描电子显微镜进行观察湿氧过后通道的形貌,通道壁厚由氧化前的1.82μm变成了2.87μm,通道直径也随之缩小。利用Deal-Grove模型分析氧化厚度随时间的变化关系,从中得出了氧化厚度随时间变化的关系曲线。二维结构下,氧化过程中发生了体积膨胀,伴随着热应力的产生,通道外角边明显往外凸出,加快了氧化反应的速率。外角区域出现了尖状,外角边变得圆滑。内角边由于体积膨胀向内收缩并且变得圆滑,由于内角边向内收缩阻碍了内角的生长,从而减慢了内角处氧化层的生长速率,氧化过后内角处也出现了尖状。利用Abaqus有限元仿真软件模拟单孔硅微通道结构热应力分布,从热应力云图中直观的反应出了内角和外角的热应力大小以及位移。外角的最大热应力达到了1036N/m2,内角的最大热应力为941N/m2,随着温度的升高热应力逐渐增大,外角应力大小为负值表现形式为压应力。外角边应力的变化比内角边应力的变化大,内角边热应力恒定为941 N/m2。整个通道外角位移最大,达到了5.4nm,内角位移稍小,大小为5.063nm。与内角相比外角氧化层生长的较快。外角边位移量变化比内角边位移量的变化大,内角边位移大小恒定为5.063nm。但是外角边和内角边表现形式不同,外角边向外凸呈弧状,内角边稍向内凹呈弓状。由于微通道特殊的孔型阵列结构,经过厚层绝缘氧化后Si-MCP会出现翘曲现象,用高温整形来使得硅片平整。在温度1250℃,重量达到450g,高温整形4h时平整度达到0.1,整形效果最佳。
[Abstract]:Based on the thick layer oxidation mechanism of silicon microchannel array, wet oxygen oxidation of n-type 100 crystalline silicon microchannel array was carried out at different times. The morphology of the channel after wet oxygen was observed by scanning electron microscope.The wall thickness of the channel changed from 1.82 渭 m to 2.87 渭 m, and the diameter of the channel decreased.The relationship between oxidation thickness and time was analyzed by Deal-Grove model, and the curve of oxidation thickness with time was obtained.In the two dimensional structure, the volume expansion occurs in the oxidation process, and with the thermal stress, the outer corner of the channel protrudes out obviously, which accelerates the oxidation reaction rate.The outer corner area appears sharp and the outer corner edge becomes smooth.The inner corner shrinks inward because of volume expansion and becomes smooth, and the inner corner shrinks the growth of the inner angle, which slows down the growth rate of the oxide layer at the inner corner. After oxidation, the inner angle also appears sharp.The thermal stress distribution of single-hole silicon microchannel structure was simulated by Abaqus finite element simulation software. The thermal stress and displacement of the inner and outer angles were directly reflected from the thermal stress cloud diagram.The maximum thermal stress of the outer angle is 1036 N / m ~ (2) and the maximum thermal stress of the inner angle is 941 N / m ~ (2). With the increase of the temperature, the thermal stress increases gradually, and the stress of the outer angle is negative in the form of compressive stress.The variation of stress in the outer corner is larger than that in the inner edge, and the thermal stress of the inner corner is constant at 941 N / m ~ (2).The external angular displacement of the whole channel is the largest, reaching 5.4 nm, and the internal angular displacement is slightly smaller, with the size of 5.063 nm.Compared with the inner angle, the outer oxide layer grows faster.The displacement of the outer corner edge is larger than that of the inner angle edge displacement, and the displacement of the inner corner edge is constant to 5.063 nm.However, the outer corner edge and the inner corner edge are different in form, the outer corner edge is convex and the inner corner edge is slightly concave.Due to the special porous array structure of microchannel, the Si-MCP will warp after thick layer insulation oxidation, and the silicon wafer is leveled by high temperature shaping.When the temperature is 1250 鈩，

本文编号：1766595