基于两层二氧化钛薄膜的新型元器件电路特性及其应用研究
发布时间:2018-04-18 03:39
本文选题:忆阻器 + MATLAB ; 参考:《宁夏大学》2015年硕士论文
【摘要】:1971年,美籍华人科学家Leon.Chua教授,根据事物的完整性原理,世界上首次提出了忆阻器和忆阻系统。它是一种全新的电子元器件,能够把电荷量q与磁通量φ这两个电学中基本物理量联系起来,证明两者之间存在一定的数学关系。忆阻器被称为继电阻、电容、电感之后的第四种基本无源电子元器件。在此理论提出很长一段时间,并没有引起科学家们的关注,直到2008年HP工作室的科研工作者在研究非易失性存储器材料时,意外的制备了具有忆阻特性的器件,第一次用物理实物证明了忆阻器存在,契合了Leon.Chua教授的理论,这才引起国内外科学家的广泛关注。本篇论文首先阐述了忆阻器的研究背景,概括论述了忆阻器国内外研究现状以及主要研究领域和方向。随后详细的对HP工作室研制成功的两层TiO2薄膜忆阻器的原理、机理进行分析叙述,并且利Matlab仿真软件对流控忆阻器模型和压控忆阻器模型中主要电路特征和性能进行仿真分析,并且对每一个参数对其电路特性的影响进行仿真分析,观察参数对其特性的影响。此外,依据忆阻器的非线性特性,利用多项式拟合方法构造窗函数,进行对忆阻器模型的进一步完善。本篇论文在忆阻器应用方面,针对先进滤波器电路截止频率不易调节等因素,采用段宗胜老师研制的一种新型忆阻器模型,应用到一阶低通滤波电路和二阶低通滤波电路,对其特性进行仿真验证,判断是否能够实现滤波功能。新型忆阻器模型,主要改进之处在于增加了一个参数变量,即临界电压值Vr,当施加在忆阻器上的电压比临界电压VT小的时候,忆阻器的状态基本保持在特定状态下不变;当施加在忆阻器上的电压比临界电VT大的时候,忆阻器状态开始发生变化。
[Abstract]:In 1971, Chinese American scientist Professor Leon.Chua, according to the integrity of things, the world for the first time proposed a resistive device and amnesia system.It is a new kind of electronic component, which can relate the charge quantity Q with the basic physical quantity of magnetic flux 蠁, and prove that there is a certain mathematical relation between them.A resistor is called the fourth basic passive electronic component after resistor, capacitance and inductance.This theory was put forward for a long time and did not attract the attention of scientists until 2008 when researchers at HP Studio accidentally fabricated devices with memory characteristics while studying nonvolatile memory materials.The existence of amnesia is proved by physical objects for the first time, which accords with Professor Leon.Chua 's theory, which has attracted wide attention of scientists at home and abroad.In this paper, firstly, the background of the research is described, and the research status, the main research fields and the direction of the research at home and abroad are summarized.Then the principle and mechanism of the two-layer TiO2 film resistor developed by HP studio are analyzed and described in detail. The main circuit characteristics and performance of the Matlab simulation software in the convection controlled resistor model and the voltage-controlled resistive model are simulated and analyzed.The effects of each parameter on the circuit characteristics are simulated and analyzed.In addition, according to the nonlinear characteristics of the resistor, the window function is constructed by polynomial fitting method, and the model of the resistor is further improved.In this paper, aiming at the difficulty of adjusting the cutoff frequency of the advanced filter circuit, a new type of memory model developed by Duan Zongsheng is adopted, which is applied to the first-order low-pass filter circuit and the second-order low-pass filter circuit.The characteristics of the filter are verified by simulation to determine whether the filtering function can be realized.The main improvement of the new model is the addition of a parameter variable, that is, the critical voltage Vr. when the voltage applied on the resistor is smaller than the critical voltage VT, the state of the resistor remains basically unchanged in a specific state.When the voltage applied on the resistor is larger than the critical voltage VT, the state of the resistor begins to change.
【学位授予单位】:宁夏大学
【学位级别】:硕士
【学位授予年份】:2015
【分类号】:TN601
【参考文献】
相关博士学位论文 前1条
1 柏晓辉;基于Pt/TiO_(2-x)/TiO_2/TiO_(2+x)/Pt双扩展忆阻器研究[D];黑龙江大学;2014年
相关硕士学位论文 前2条
1 段宗胜;基于忆阻器的滤波器设计与仿真[D];武汉科技大学;2012年
2 蔡发君;忆阻器在滤波器设计中的应用研究[D];武汉科技大学;2014年
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