宽带微波单片正交混频器的设计

发布时间：2018-04-18 08:54

  本文选题：正交混频器 + 镜频抑制　； 参考：《微波学报》2016年S1期

【摘要】：本文采用WIN 0.15um GaAs PHEMT工艺设计了一款6~10GHz的微波无源单片集成正交混频器。由于在本振端和射频端都采用了螺旋型的Marehand巴伦结构,从而使芯片面积得到了极大的改善,芯片的总面积为1.5mm×1.15mm。在所要求的频率范围之内,ADS仿真结果表明:变频损耗小于10d B,典型值为7d B;镜频抑制大于25d B,典型值是35d B;LO到RF的隔离度大于40d B,本振到中频的隔离度大于20d B,射频到中频的隔离度大于30d B。
[Abstract]:In this paper, a 6~10GHz microwave passive monolithic integrated quadrature mixer is designed using WIN 0.15um GaAs PHEMT process.Because the spiral Marehand Barron structure is used in both the local and RF terminals, the chip area is greatly improved. The total area of the chip is 1.5mm 脳 1.15mm.The simulation results of ads show that the frequency conversion loss is less than 10 dB, the typical value is 7 dB, the mirror frequency suppression is more than 25 dB, the typical isolation from 35 dB to RF is more than 40 dB, and the isolation from local oscillator to intermediate frequency is more than 20 dB.The isolation from RF to if is more than 30 dB.
【作者单位】： 电子科技大学极高频复杂系统国防重点学科实验室;
【分类号】：TN773
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本文编号：1767653