MEMS温度传感器中ICP刻蚀技术研究

发布时间：2018-04-19 08:40

  本文选题：温度传感器 + ICP刻蚀　； 参考：《合肥工业大学》2015年硕士论文

【摘要】：随着MEMS传感器应用越来越普及,在对其加工工艺的要求也在不断提高。作为MEMS器件加工的一项关键技术——ICP刻蚀技术,因其刻蚀过程自动化程度高、刻蚀侧壁垂直度好、大面积刻蚀均匀性好及污染少等优点,目前被广泛应用于体硅MEMS工艺中的高深宽比刻蚀。但是由于ICP刻蚀技术的机理比较复杂,影响刻蚀结果的工艺参数较多,所以ICP刻蚀技术总体上还不够成熟,具体表现在没有具体的ICP刻蚀仿真工具软件,刻蚀工艺参数不易调整,对刻蚀结果的预测不够准确等,所以现在工艺上主要通过大量的实验来对参数进行调整、验证及改进,已达到刻蚀的要求。本论文是在本课题组前期对不同形貌结构的刻蚀工艺进行研究的基础上,在设计温度传感器梳齿结构的加工过程中,确立的ICP刻蚀工艺实验目的及工艺参数调整的方向。实验首先研究ICP刻蚀的各参数对其刻蚀结果的影响,重点研究刻蚀／钝化周期、气体流量、极板功率和偏置电压等条件因素对刻蚀结果产生的影响,最后采用正交实验法设计实验方案。分别优化得到了三种尺寸槽宽刻蚀到所需深度时,其侧壁垂直度达到最优的刻蚀参数。再将最优工艺参数应用于某陀螺仪的实际制备中,得到了较为理想的刻蚀形貌,陀螺仪的各项性能指标满足了传感器的实用化需求。另外,ICP刻蚀技术在对硅、二氧化硅材料以及Ⅲ-V族化合物等材料刻蚀方面的应用越来越多,并获得了很好的效果。MEMS的未来无可限量,ICP刻蚀技术必将越发成熟,在微纳电子器件的加工中发挥应有的作用。
[Abstract]:With the application of MEMS sensors becoming more and more popular, the requirements of its processing technology are also increasing.As a key technology of MEMS device processing, MEMS etching technology has many advantages, such as high degree of automatization of etching process, good vertical degree of etching sidewall, good uniformity of large area etching and less pollution, etc.At present, it is widely used in bulk silicon MEMS process with high aspect ratio etching.However, because of the complex mechanism of ICP etching technology and the large number of technological parameters that affect the etching results, the ICP etching technology is not mature enough on the whole. The concrete manifestation is that there is no specific ICP etching simulation tool software.The parameters of etching process are not easy to adjust and the prediction of etching results is not accurate. So the process mainly adjusts, verifies and improves the parameters through a large number of experiments, which has met the requirements of etching.This paper is based on the study of etching technology of different morphology and structure in our group, and establishes the experimental purpose of ICP etching process and the adjustment direction of process parameters in the process of designing the comb structure of temperature sensor.In the experiment, the influence of various parameters of ICP etching on the etching results is studied. The effects of etching / passivation period, gas flow rate, plate power and bias voltage on the etching results are studied.Finally, the orthogonal experiment method is used to design the experimental scheme.The optimum etching parameters are obtained when the width of the three sizes etched to the desired depth.The optimum process parameters are applied to the practical preparation of a gyroscope, and the better etching morphology is obtained. The performance of the gyroscope meets the practical needs of the sensor.In addition, ICP etching technology has been used more and more in etching silicon, silica and 鈪，

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