低功耗无回跳逆导型IGBT的结构设计和特性研究

发布时间：2018-04-22 10:10

本文选题：绝缘栅双极型晶体管 + 逆导型IGBT　；参考：《西安理工大学》2017年硕士论文

【摘要】：随着薄片工艺等制造技术的发展,在场阻止型的绝缘栅双极型晶体管(Field-Stop Insulated Gate Bipolar Transistor, FS-IGBT)的背面进行光刻和离子注入并形成N+短路区(N+-short)已成为一种可能,由此上世纪90年代提出的阳极短路型IGBT重新焕发生机。阳极短路型 IGBT 又被称为逆导型 IGBT (Reverse-Conducting Insulated Gate Bipolar Transistor, RC-IGBT)。但是目前的RC-IGBT产品只适用于软开关领域(Soft Switching Condition),这是由于它们在逆向导通过程中反向恢复损耗过大以及电流分布不均匀,进而造成器件局部过热和可靠性较低。本文针对目前RC-IGBT存在的问题,利用Sentaurus TCAD仿真软件分析了影响RC-IGBT的正向导通、反向导通、关断、反向恢复和阻断等特性的因素。首先探究了RC-IGBT背面结构的尺寸对正向导通和反向导通特性的影响。随后针对常规RC-IGBT在硬开关领域(Hard Switching Condition)所遇到的问题,提出了具有低反向恢复损耗的RC-IGBT元胞结构。最后对于常规RC-IGBT在正向导通中容易出现的回跳(Snapback)现象,给出了一种新型的短路区结构。仿真结果表明,本文所提出的低功耗型的RC-IGBT,相比于常规RC-IGBT,其反向恢复损耗能减少约一半,反向恢复时间可减少约三分之一,反向恢复峰值电流减少约四分之一。此外,本文提出了一种沟槽隔离型的短路区结构,采用此结构后,元胞宽度可降为常规RC-IGBT元胞宽度的1/20,同时又能确保导通中不出现回跳现象,进而在导通中拥有均匀的电流分布。本文的研究对于解决目前RC-IGBT在商业化过程中所面临的问题,给出了一种可行的解决方案,具有一定的参考意义,也有助于RC-IGBT的早日国产化。
[Abstract]:With the development of fabrication technology such as wafer technology, it is possible that the field stop Insulated Insulated Gate Bipolar transistors (FS-IGBTs) have been photolithography and ion implantation on the back of the FS-IGBT to form N short circuit N shortcuts. Thus the anodic short-circuit IGBT proposed in the 1990 s is revitalized again. Anodic short circuit IGBT is also called reverse conductive Insulated Gate Bipolar transistor. RC-IGBT. However, the current RC-IGBT products are only suitable for soft Switching condition in the soft switching field, which is due to the excessive reverse recovery loss and uneven current distribution in the reverse conduction process, resulting in local overheating and low reliability of the devices. Aiming at the problems existing in RC-IGBT at present, this paper analyzes the factors that affect the characteristics of RC-IGBT, such as forward conduction, reverse conduction, turn-off, reverse recovery and blocking, by using Sentaurus TCAD simulation software. The influence of the size of the back structure of RC-IGBT on the forward and reverse conduction characteristics is investigated. Then, in order to solve the problem encountered by conventional RC-IGBT in hard Switching condition, a RC-IGBT cell structure with low reverse recovery loss is proposed. At last, a novel short-circuit structure is presented for the phenomenon of snapback, which is easy to appear in the forward conduction of conventional RC-IGBT. The simulation results show that compared with conventional RC-IGBTs, the proposed RC-IGBTs can reduce the reverse recovery loss by about half, reverse recovery time by about 1/3, and reverse recovery peak current by about 1/4. In addition, in this paper, a trench isolation short circuit structure is proposed. With this structure, the cell width can be reduced to 1 / 20 of the conventional RC-IGBT cell width, and at the same time, it can ensure that there is no rebound phenomenon in the conduction. In turn, there is a uniform current distribution in the conduction. This paper provides a feasible solution for solving the problems that RC-IGBT is facing in the process of commercialization. It has some reference significance and is also helpful to the localization of RC-IGBT at an early date.
【学位授予单位】：西安理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8

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