CMP中TEOS去除速率的一致性

发布时间：2018-04-23 11:27

本文选题：正硅酸乙酯(TEOS) + 化学机械平坦化(CMP)　；参考：《微纳电子技术》2017年09期

【摘要】：针对300 mm正硅酸乙酯(TEOS)镀膜片在化学机械平坦化(CMP)过程中中心去除速率快而边缘去除速率慢的问题,研究了抛光头摆动位置、抛光头不同区域压力和非离子型表面活性剂对TEOS去除速率一致性的影响。实验结果显示,抛光头距抛光盘中心越远,中心去除速率越慢,去除速率一致性越好;增加抛光头边缘压力,加快了边缘去除速率,提高了去除速率一致性;增加非离子表面活性剂添加量,提高了温度分布均匀性,进而改善去除速率一致性。与初始工艺对比,在抛光头摆动位置距抛光盘中心7.2~8.2英寸(1英寸=2.54 cm)、抛光头边缘压力增加20%、添加非离子表面活性剂体积分数1.5%条件下,片内非均匀性(WIWNU)降低了60.9%。
[Abstract]:In order to solve the problem that the center removal rate is fast and the edge removal rate is slow in the process of chemical mechanical planarization (CMP), the swinging position of polishing head is studied. Effects of different pressure and Nonionic Surfactant on TEOS removal rate. The experimental results show that the longer the polishing head is from the center of the polishing disc, the slower the center removal rate is and the better the consistency of the removal rate is, and the higher the edge pressure of the polishing head is, the faster the edge removal rate is and the higher the consistency of the removal rate is. Increasing the amount of Nonionic surfactants can improve the uniformity of temperature distribution and improve the consistency of removal rate. Compared with the initial process, the in-chip inhomogeneity was decreased by 60.9% at the swing position of the polishing head from the center of the polishing disc, the edge pressure of the polishing head increased by 20% and the volume fraction of Nonionic surfactant was 1.5%.
【作者单位】：河北工业大学电子信息工程学院;天津市电子材料与器件重点实验室;
【基金】：国家中长期科技发展规划重大专项资助项目(2009ZX02308) 河北省自然科学基金青年基金资助项目(F2015202267) 天津市自然科学基金资助项目(16JCYBJC16100) 河北工业大学优秀青年科技创新基金资助项目(2015007)
【分类号】：TN305.2

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