热电制冷器在芯片热点去除中的应用研究

发布时间：2018-04-24 07:11

  本文选题：热电制冷器 + 芯片　； 参考：《电子科技大学》2015年硕士论文

【摘要】：随着电子元器件的微型化和集成化程度的提高,芯片单位面积中产生的热量越来越多,且不同部位的产热量也不均匀,因此,芯片中会不可避免地产生极高热流密度的热点。传统的散热方式在含有热点的芯片散热方面存在固有缺陷,无法去除芯片中热点,而热电制冷器(Thermoelectric Cooler:TEC)在芯片热点这种热量小且集中的散热环境中具有独特优势,但目前关于TEC在这方面的研究主要以追求性能为主,离实际应用还有较大距离,本文以一款已有的TEC(RMT公司:1MD06-021-03)展开,深入研究其工作性能以及在去除芯片热点中的应用。本文首先根据TEC的工作原理建立其传热过程的数学模型,并通过仿真验证该模型的准确性。为提高模型精度并扩大其应用范围,对塞贝克系数、导热系数及电阻等模型参数的温度相关性进行研究,结果表明,塞贝克系数和导热系数随温度的变化对模型精度的影响可以忽略,而在工作温度范围较大时须将电阻的温度相关性考虑进模型中。除此之外,文中还研究了冷热端边界条件对TEC工作性能的影响,发现热端传热热阻的增加会减小TEC的最大工作电流值、最大冷热端温差及最大净吸热量,同时还会使TEC的性能系数降低;冷端热载荷的增加同样会导致TEC的性能系数和所能实现的最大温差减小,但TEC的最大工作电流值会变大。然后,利用所建立的TEC模型,展开TEC去除芯片热点的仿真研究。在传热热阻RT=0K/W、热点热源直径D1=0.5mm、功率密度为500W/cm2时,TEC的最大工作电流可以取到6A左右,而最佳工作电流则为3A,此时TEC恰好可以将热点去除,与不使用TEC时相比,芯片的最大温差由13.9℃降至3.2℃,其中4.9℃的温降由TEC主动制冷所致。然而,随着传热热阻的增大,整个模型的温度会升高,但对TEC的制冷能力和工作效率影响很小,并且当传热热阻较大时,工作电流的增加并不能明显增大TEC的制冷量,相反还会增大芯片的整体温度。最后,设计并搭建了TEC去除芯片热点的实验平台,对TEC在实际应用中的芯片热点去除效果进行研究,结果表明TEC具有很好的热点去除能力。
[Abstract]:With the increase of miniaturization and integration of electronic components, more and more heat is generated in the unit area of the chip, and the heat production in different parts is not uniform. Therefore, the hot spot of high heat flux will inevitably be produced in the chip. The traditional heat dissipation method has inherent defects in the heat dissipation of chips with hot spots, which cannot remove the hot spots in the chip, while the thermoelectric cooler: TECs have unique advantages in the small and concentrated heat dissipation environment of the hot spots of the chips. However, the current research on TEC in this area is mainly about performance, which is still far away from practical application. In this paper, an existing TEC(RMT company: 1 MD06-021-03) is used to deeply study its performance and its application in removing hot spots of chips. In this paper, the mathematical model of the heat transfer process of TEC is established according to its working principle, and the accuracy of the model is verified by simulation. In order to improve the precision of the model and expand its application range, the temperature dependence of the model parameters, such as Seebeck coefficient, thermal conductivity coefficient and resistance, is studied. The results show that, The influence of the variation of Seebeck coefficient and thermal conductivity with temperature on the precision of the model can be neglected, but the temperature dependence of resistance should be taken into account when the working temperature range is large. In addition, the influence of the boundary conditions on the performance of TEC is also studied. It is found that the increase of heat transfer resistance at the hot end will decrease the maximum operating current, the maximum temperature difference and the maximum net heat absorption of TEC. At the same time, the performance coefficient of TEC will be decreased, and the increase of thermal load at the cold end will also decrease the performance coefficient and the maximum temperature difference of TEC, but the maximum operating current of TEC will increase. Then, using the established TEC model, the simulation research of TEC removing hot spot is carried out. When the heat transfer resistance is 0 K / W, the diameter of hot spot heat source is 0. 5 mm, and the power density is about 6 A, the best working current is 3 A, and the TEC can remove the hot spot exactly, compared with the one without TEC. The maximum temperature difference of the chip was reduced from 13.9 鈩，

本文编号：1795660