铜CMP碱性抛光液中氧化剂的电化学行为研究

发布时间：2018-04-24 07:11

  本文选题：化学机械抛光 + 电化学　； 参考：《微电子学》2017年04期

【摘要】：化学机械抛光(CMP)工艺是IC工艺中大马士革工序的关键步骤。抛光液的电化学行为研究对抛光质量的控制具有重要意义。采用电化学测试手段,研究碱性抛光液中氧化剂(H_2O_2)对铜表面钝化膜的成膜影响,分析H_2O_2对抛光速率、表面粗糙度的影响机理。通过实验确定,在0.5%SiO_2磨料和3%表面活性剂的碱性抛光液中,添加0.5%的H_2O_2和3%的FA/OⅡ型螯合剂可获得大于800 nm/min的高抛光速率和表面粗糙度为22.2 nm的较佳平坦效果。
[Abstract]:Chemical mechanical polishing (CMP) process is the key step of Damascus process in IC process. The study of the electrochemical behavior of polishing solution is of great significance to the quality control of polishing. The effect of oxidizer (H _ 2O _ 2) in alkaline polishing solution on the formation of passivated film on copper surface was studied by electrochemical measurement. The influence mechanism of H_2O_2 on polishing rate and surface roughness was analyzed. It is determined by experiments that the addition of 0.5% H_2O_2 and 3% FA/O 鈪，

本文编号：1795661