单载流子传输的InP基双异质结光敏晶体管高频特性的研究

发布时间：2018-04-25 07:20

本文选题：单载流子传输(UTC) + InP基单载流子双异质结晶体管探测器(UTC-DHPT)　；参考：《北京工业大学》2015年硕士论文

【摘要】：与PIN探测器和APD探测器相比,异质结光敏晶体管探测器(HPT)具有光增益大、频率响应高、噪声低、响应度高、易与HBT集成等优点,因为具有内部增益和非线性处理能力,在高速光纤通信网和光载微波通信系统中的应用越来越广泛。但是HPT使用异质结晶体管(HBT)的基区和集电区作为吸收层,由于光生空穴的迁移率低等因素,HPT在响应度与响应速度的优化上存在矛盾。为了缓解矛盾得到同时具有高响应度与高响应速度的器件,我们将单载流子传输(UTC)的思想运用在In P基异质结晶体管探测器(HPT)中,仅用基区作为吸收层,形成InP基单载流子双异质结晶体管探测器(UTC-DHPT)。针对UTC-DHPT晶体管探测器,本文的主要工作内容如下:1.建立了UTC-DHPT器件的物理模型,描述UTC-DHPT基区产生的光生载流子与器件内部载流子的行为,分析了UTC-DHPT的光响应度和光增益。设计并优化了UTC-DHPT器件的纵向结构和横向结构。2.基于半导体器件仿真软件Silvaco建立了UTC-DHPT的二维仿真模型,对比分析了UTC-DHPT器件和传统单异质结光敏晶体管(SHPT)的基本性能。结果表明,与SHPT相比,UTC-DHPT更能获得高的光响应度和光增益,最大的光响应度达到37.5A/W,并且UTC-DHPT器件更适合处理大功率的光信号。UTC-DHPT可以提供良好的电学电流增益,为光探测器和前置放大器的OEIC单片集成的设计和工艺制作提供了方便。3.详细分析了UTC-DHPT的光学高频性能,得到了光特征频率的表达式。讨论了UTC-DHPT不同工作模式(二端工作模式2T、三端工作模式3T以及DHBT工作状态)下,光生载流子产生光生集电结电压对器件小信号等效模型中扩散电容与势垒电容的影响。基于Silvaco仿真模型,分析了不同工作模式下UTC-DHPT和SHPT以及DHBT工作状态下的特征频率和短路电流增益。结果表明,UTC-DHPT比传统的SHPT有更好的频率特性,三端工作模式下的UTC-DHPT可以同时提供高响应度和高响应速度。4.将光生电流合理引入双极晶体管小信号等效电路中,充分考虑光生载流子对发射结扩散电容与势垒电容的影响,给出了UTC-DHPT器件在二端工作模式2T、三端工作模式3T以及DHBT工作状态下的小信号等效电路,进一步分析了UTC-DHPT在三种不同工作模式下的光学高频性能。5.完成了InP基高速高响应度UTC-DHPT器件的外延生长、制备和器件测试。测试结果表明,与传统的SHPT和PIN型光探测器相比,UTC-DHPT光响应度达到了10.46A/W,能提供更大的光增益,光特征频率达到了50.5GHz。
[Abstract]:Compared with the PIN detector and the APD detector, the heterojunction Guang Min transistor detector has the advantages of large optical gain, high frequency response, low noise, high responsivity and easy integration with the HBT because of its internal gain and nonlinear processing ability. It is widely used in high-speed optical fiber communication network and optical microwave communication system. However, the base and collector regions of the heterojunction transistor (HBT) are used as the absorption layer in HPT. Due to the low mobility of photogenerated holes, there is a contradiction between the response and response speed optimization. In order to alleviate the contradiction and obtain devices with both high responsivity and high response speed, we apply the idea of single carrier transport UTC to the in P base heterojunction transistor detector (HPTT), using only the base region as the absorption layer. The InP based single carrier double heterojunction transistor detector is formed. For the UTC-DHPT transistor detector, the main work of this paper is as follows: 1. The physical model of UTC-DHPT devices is established to describe the behavior of photogenerated carriers and internal carriers generated by UTC-DHPT base region. The optical responsivity and optical gain of UTC-DHPT are analyzed. The longitudinal and transverse structures of UTC-DHPT devices are designed and optimized. Based on the semiconductor device simulation software Silvaco, the two-dimensional simulation model of UTC-DHPT is established, and the basic performance of UTC-DHPT device and traditional single heterojunction Guang Min transistor is compared and analyzed. The results show that compared with SHPT, UTC-DHPT can obtain higher optical responsivity and gain, the maximum optical responsivity is 37.5 A / W, and UTC-DHPT device is more suitable for processing high-power optical signal. UTC-DHPT can provide good electrical current gain. It provides convenience for the design and fabrication of OEIC monolithic integration of photodetector and preamplifier. The optical high frequency performance of UTC-DHPT is analyzed in detail, and the expression of optical characteristic frequency is obtained. The influence of photogenerated collector voltage on the diffusion capacitance and barrier capacitance in the small signal equivalent model of UTC-DHPT is discussed under different operating modes (2T in two-terminal mode, 3T in three-terminal mode and DHBT operating state). Based on the Silvaco simulation model, the characteristic frequency and short-circuit current gain of UTC-DHPT and SHPT and DHBT in different operating modes are analyzed. The results show that UTC-DHPT has better frequency characteristics than traditional SHPT, and UTC-DHPT in three-terminal mode can provide both high responsivity and high response speed. The photogenerated current is reasonably introduced into the small signal equivalent circuit of bipolar transistor, and the influence of photogenerated carriers on the diffusion capacitance and barrier capacitance of emission junction is fully considered. The small signal equivalent circuits of UTC-DHPT devices under two terminal operation mode 2T, three terminal operation mode 3T and DHBT working state are given. The optical high frequency performance of UTC-DHPT in three different operating modes is further analyzed. The epitaxial growth, fabrication and device testing of InP based UTC-DHPT devices with high speed and high responsivity have been completed. The experimental results show that compared with the conventional SHPT and PIN photodetectors, the optical responsivity of UTC-DHPT is 10.46 A / W, which can provide greater optical gain, and the optical characteristic frequency reaches 50.5 GHz.
【学位授予单位】：北京工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN32

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