双DBR半导体激光器工艺初步研究

发布时间：2018-04-25 22:02

本文选题：半导体激光器 + 双波长　；参考：《长春理工大学》2017年硕士论文

【摘要】：双波长半导体激光器具有效率高、结构紧凑、使用方便等优点,在很多领域有重要的应用。1030nm、1064nm等波段双波长半导体激光器在高亮度的激光彩色显示、激光彩色打印等设备及娱乐业等领域中具有广阔的应用前景。目前国内关于高功率双波长半导体激光器的研究相对于发达国家有着较大的差距,因此,研究出单片集成高功率、近衍射极限双波长半导体激光器具有重要的意义。在本论文的研究中,我们设计一种1064nm,1030nm双DBR半导体激光器结构,并在外延片上进行试验制做。本论文首先对半导体激光器的发展历程及原理进行了介绍。然后采用MOCVD系统对1064nm,1030nm双DBR半导体激光器外延结构进行生长,通过湿法腐蚀工艺制备出了脊形波导,采用325nm全息曝光系统对脊形波导进行全息光刻,完成DBR的制备,并利用ICP干法刻蚀,制备出光栅的周期结构,通过光刻、湿法腐蚀等工艺制备出了锥形放大器,初步完成了双DBR锥形半导体激光器的工艺制作。最后对研制的单DBR和锥形半导体激光器的输出特性进行了测试分析。
[Abstract]:Dual-wavelength semiconductor lasers have many advantages, such as high efficiency, compact structure, easy to use and so on. They have important applications in many fields. 1030nm / 1064nm dual-wavelength semiconductor lasers have high brightness color display. Laser color printing and other equipment and entertainment industry and other fields have a broad application prospects. At present, there is a big gap in the research of high power dual-wavelength semiconductor lasers compared with the developed countries. Therefore, it is of great significance to study single-chip integrated dual-wavelength semiconductor lasers with high power and near diffraction limit. In this thesis, we designed a 1064nm 1030nm double DBR semiconductor laser and fabricated it on the epitaxial wafer. Firstly, the development and principle of semiconductor laser are introduced in this paper. Then the epitaxial structure of 1064nm 1030nm double DBR semiconductor laser was grown by MOCVD system. The ridged waveguide was fabricated by wet etching process. The ridged waveguide was holographed by 325nm holographic exposure system to complete the preparation of DBR. The periodic structure of the grating was fabricated by ICP dry etching. The tapered amplifier was fabricated by lithography and wet etching. The fabrication of double DBR conical semiconductor laser was preliminarily completed. Finally, the output characteristics of single DBR and conical semiconductor lasers are tested and analyzed.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN248.4

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