硅通孔结构热力耦合数值分析

发布时间：2018-04-26 16:14

本文选题：硅通孔 + 热力耦合　；参考：《大连交通大学》2015年硕士论文

【摘要】：伴随着科技的进步,电子器件逐渐朝着集成化、微型化的方向发展,热问题越来越受业界关注,热效应带来电子器件性能不稳定、失效甚至损坏等一系列问题。当前集成电路热设计中主要以传统的实验与数值仿真补充相结合的方法。针对TSV封装结构,建立数值分析模型,利用有限元软件进行稳态和瞬态热力耦合分析。通过数值分析,寻找温度、应力和应变的峰值及其分布规律,探讨了不同功率循环加载以及变形封装结构耦合效应特点,并对分析结果进行对比。此外,还考虑各项参数的不确定性,分别进行单一和多个参数组合的区间不确定分析,得到TSV模型热力耦合不确定性区间响应。针对TSV模型加载后的热问题,本文分别讨论了不同TSV模型结构的热力耦合效应,探讨相关因素的影响,开展以下几个方面的工作,研究内容主要包括:(1)针对常用硅通孔叠层封装的热问题,利用有限元软件,进行稳态热力耦合分析,讨论了峰值及其位置分布,并对不同结构的热力耦合分析结果进行对比。(2)利用稳态分析中TSV模型的十个节点温度,采用蚁群寻源方法对封装体热源进行识别分析。(3)针对实际中循环加载的不同阶段工况,对多热源TSV叠层封装进行了瞬态热力耦合分析。通过讨论大功率和小功率循环加载情况,对模型热力耦合效应进行分析,进一步探讨了不同孔间距和形状的封装体耦合效应特点,并进行结果对比,寻求可能的对应关系。(4)针对TSV封装模型中不确定性参数问题,通过结合区间有限元方法与区间摄动理,分别对单一和多个参数组合进行区间不确定性分析,得到TSV模型热力耦合不确定性区间响应。通过对TSV封装的热效应问题进行确定性和不确定性研究,分析了不同TSV结构对其热效应的影响程度以及参数不确定性的影响,相关研究结论可作为参考依据应用于TSV模型结构优化设计中,尤其在热设计方面。
[Abstract]:With the progress of science and technology, electronic devices are gradually developing towards the direction of integration and miniaturization. The heat problem has been paid more and more attention by the industry. The thermal effect has brought about a series of problems such as instability, failure and even damage of electronic devices. At present, the thermal design of integrated circuits is mainly based on the combination of traditional experiments and numerical simulation. A numerical analysis model is established for TSV packaging structure, and the steady and transient thermal coupling analysis is carried out by finite element software. Through numerical analysis, the peak value and distribution of temperature, stress and strain are found, and the characteristics of coupling effect of different power cyclic loading and deformed package structure are discussed, and the results are compared. In addition, considering the uncertainty of each parameter, the interval uncertainty analysis of single or multiple parameter combinations is carried out, and the interval response of TSV model with thermodynamic coupling uncertainty is obtained. In view of the heat problem of TSV model after loading, this paper discusses the thermo-mechanical coupling effect of different TSV model structures, discusses the influence of relevant factors, and carries out the following work. The main research contents include: (1) aiming at the thermal problem of common silicon through hole laminated packaging, the steady-state thermo-mechanical coupling analysis is carried out by using finite element software, and the peak value and its location distribution are discussed. The results of thermal-mechanical coupling analysis of different structures are compared. (2) using the ten node temperature of TSV model in steady-state analysis, and identifying and analyzing the heat source of package by means of ant colony source finding method, the paper aims at the different stages of cyclic loading in practice. Transient thermal coupling analysis of multi-heat source TSV laminated package is carried out. By discussing the high power and low power cyclic loading, the coupled effect of the model is analyzed, and the characteristics of the coupling effect of the package with different hole spacing and shape are discussed, and the results are compared. In order to solve the uncertain parameter problem in TSV packaging model, the interval uncertainty analysis is carried out by combining interval finite element method with interval perturbation theorem. The interval response of TSV model with thermodynamic coupling uncertainty is obtained. By studying the certainty and uncertainty of thermal effect of TSV package, the influence degree of different TSV structure on thermal effect and the influence of parameter uncertainty are analyzed. The relevant conclusions can be used as a reference for structural optimization design of TSV model, especially in thermal design.
【学位授予单位】：大连交通大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN603

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