795nm单模垂直腔面发射激光器

发布时间：2018-04-26 18:50

  本文选题：垂直腔面发射激光器(VCSEL) + 单模　； 参考：《半导体技术》2017年01期

【摘要】：针对铷原子能级跃迁对光谱的特殊需求,设计并制备了795 nm单模垂直腔面发射激光器(VCSEL)。根据对VCSEL的光场和模式的分析和计算结果,设计了单模VCSEL芯片结构。采用MOCVD技术生长了外延结构,制备了不同有源区直径的氧化限制型VCSEL芯片并进行了测试。当有源区直径从6μm减小到3μm时,VCSEL芯片的边模抑制比(SMSR)由8.76 d B增加到34.05 d B,阈值电流由0.77 m A减小到0.35 m A。有源区直径为6,5,4和3μm的VCSEL芯片的输出功率分别为0.37,0.46,0.58和0.44 m W,有源区直径为4μm的VCSEL芯片的远场为圆形光束,发散角为15°。85℃时3.5μm有源区直径的VCSEL芯片输出功率为0.125 m W,激射波长为795.3 nm。室温3 d B带宽大于8 GHz,满足了铷原子传感器对VCSEL单模光谱、输出功率及调制速率的要求。
[Abstract]:A single mode vertical cavity surface emitting laser (VCSELL) at 795nm was designed and fabricated to meet the special spectral requirements of rubidium atomic transition. According to the analysis and calculation results of the light field and mode of VCSEL, a single mode VCSEL chip structure is designed. The epitaxial structure was grown by MOCVD technique, and the oxidation limiting VCSEL chips with different active region diameters were fabricated and tested. When the diameter of the source region decreases from 6 渭 m to 3 渭 m, the side mode rejection ratio (SMSRR) of VCSEL chip increases from 8.76 dB to 34.05 dB, and the threshold current decreases from 0.77 Ma to 0.35 Ma. The output power of VCSEL chip with active zone diameter of 6 渭 m and 3 渭 m is 0.37 渭 m and 0.44 MW, respectively. The far-field of VCSEL chip with active zone diameter of 4 渭 m is circular beam. When the divergence angle is 15 掳.85 鈩，

本文编号：1807211