无结晶体管阈值电压模型与新结构

发布时间：2018-04-27 11:11

本文选题：无结晶体管 + 阈值电压提取　；参考：《南京邮电大学》2015年硕士论文

【摘要】：随着半导体技术的不断进步,晶体管特征尺寸已缩短至纳米范畴,当器件沟道长度小于10nm以后,制造沟道PN结的工艺变得更为困难。基于这一问题,沟道和源漏掺杂类型相同的无结晶体管再一次被提出。阈值电压是器件最重要的电学参数,它在器件模拟和电路设计方面都起着举足轻重的作用。本文在简要介绍无结晶体管工作机理和优势的基础上,深入研究了无结晶体管的阈值电压提取方法、模型和新结构。首先,分析总结了9类阈值电压提取方法,分别利用它们提取了不同沟道长度FinFET和纳米线无结晶体管的阈值电压。提取结果表明:不同的阈值电压提取方法的提取结果各不相同,并且有些阈值电压提取方法不适用于提取短沟道器件的阈值电压。其次,通过求解二维泊松方程,建立了长沟道三栅无结晶体管的亚阈值区电势模型,在电势模型的求解中首次考虑了埋氧层和衬底偏置的影响,并且也考虑了栅拐角的影响。在此基础上,根据阈值电压的定义,推导出了该器件的阈值电压模型。电势和阈值电压模型的解析结果和三维模拟软件仿真结果吻合良好,验证了模型的准确性。最后,为了减小器件的关态电流和改善器件的关断特性,提出了一种新的双栅无结晶体管结构——PN沟道双栅无结晶体管。和传统的双栅无结晶体管相比,新结构器件可以大大减小器件的关态电流,提高器件的开关电流比。
[Abstract]:With the development of semiconductor technology, the characteristic size of transistors has been reduced to nanometer range. When the channel length of the device is smaller than 10nm, the fabrication process of channel PN junction becomes more difficult. Based on this problem, the junction-free transistors with the same channel and source-drain doping types are proposed again. Threshold voltage is the most important electrical parameter, which plays an important role in device simulation and circuit design. Based on the brief introduction of the working mechanism and advantages of the junction free transistor, the threshold voltage extraction method, the model and the new structure of the junction free transistor are studied in this paper. Firstly, nine kinds of threshold voltage extraction methods are analyzed and summarized, which are used to extract the threshold voltage of different channel length FinFET and nanowire junction free transistor respectively. The results show that the results of different threshold voltage extraction methods are different, and some threshold voltage extraction methods are not suitable for extracting threshold voltage of short channel devices. Secondly, by solving the two-dimensional Poisson equation, the sub-threshold potential model of long channel three-gate junction free transistors is established. The effects of buried oxygen layer and substrate bias are considered for the first time in the solution of the potential model, and the influence of gate corner is also taken into account. Based on the definition of threshold voltage, the threshold voltage model of the device is derived. The analytical results of the potential and threshold voltage models are in good agreement with the simulation results of 3D simulation software, and the accuracy of the model is verified. Finally, in order to reduce the turn-off current and improve the turn-off characteristics of the device, a new dual-gate non-junction transistor structure, PN channel double-gate non-junction transistor, is proposed. Compared with the traditional dual-gate junction transistor, the new device can greatly reduce the switching current of the device and improve the switching current ratio of the device.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN32

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