大面积高性能薄膜光探测器阵列的构筑

发布时间：2018-04-29 10:00

本文选题：薄膜 + 光探测器　；参考：《合肥工业大学》2017年硕士论文

【摘要】：薄膜光探测器由于具有高的响应度、快的响应速率广泛应用于通信、军事、火灾报警、航空航天等领域中,并且随着近年来可穿戴设备、可折叠、可弯曲设备的发展,人们不仅需要努力提高光探测器的响应度、响应速率、探测率等性能,而且需要寻求新的材料来适应穿戴设备、可折叠、可弯曲设备等更高的要求。针对这些问题,本文开展了两个方向的研究。(1)通过CVD法生长出14英寸大的石墨烯,采用一种不去除PMMA的无缝转移方法成功地将生长好的石墨烯转至PMMA/AB胶/PET基底上。石墨烯不仅完整性比较好,而且测得面电阻分布在200-500Ωsq-1,最低只有219Ωsq-1;光透过率为96.5%。将转移得到的大面积石墨烯与条带ZnSe结合构筑的光探测器阵列,不仅具有较高的光电流,较大的响应度,较高的探测率和较短的响应时间,而且集成的条带ZnSe/石墨烯/PMMA/AB胶/PET柔性的光探测器阵列可以作为高均匀性的高性能图像传感器。然而,器件在弯曲3次过程中,光电流急剧下降,弯曲3次之后,光电流减小比较缓慢,达到稳定状态,说明该器件性能的机械持久性不够好,这有待我们进一步的改善。(2)在ZnSe薄膜和Ni箔之间通过固相反应的方式在Ni箔上界面限制外延生长非层状结构的NiSe薄膜。经研究发现NiSe薄膜生长的机制是Ni与Zn的互扩散形成NiSe薄膜,NiSe薄膜的晶粒尺寸达微米级。NiSe薄膜通过图形化生长构造出的NiSe薄膜光探测器,不仅满足了光探测器在传感和图像系统中的集成,而且以生长的高质量的NiSe薄膜构造的光探测器具有150 A/W的响应度,远远高于直接沉积得到的纳米颗粒NiSe薄膜构造的光探测器的响应度,响应度提高了4个数量级。
[Abstract]:Thin film photodetectors have been widely used in communication, military, fire alarm, aerospace and other fields because of their high responsivity and fast response rate. With the development of wearable devices, foldable and flexible devices in recent years, thin film photodetectors have been widely used in the field of communication, military, fire alarm, aerospace and so on. People not only need to improve the performance of photodetectors, such as responsivity, response rate and detectivity, but also need to find new materials to meet the higher requirements of wearable devices, foldable devices, flexible devices, and so on. In order to solve these problems, this paper has carried out a two-direction study. (1) 14 inches of graphene was grown by CVD method, and a seamless transfer method without removing PMMA was used to successfully transfer the grown graphene onto the PMMA/AB / PET substrate. Graphene not only has good integrity, but also has a surface resistance distribution of 200-500 惟 sq-1, the lowest is 219 惟 sq-1, and the optical transmittance is 96.5. The photodetector array constructed by combining the transferred graphene with strip ZnSe not only has higher photocurrent, larger responsivity, higher detection rate and shorter response time. And the integrated ZnSe/ graphene / PMMA / AB / PET flexible photodetector array can be used as a high uniformity image sensor. However, the photocurrent of the device decreases sharply during three times of bending. After three times of bending, the photocurrent decreases slowly and reaches a stable state, which indicates that the mechanical durability of the device is not good enough. We need to further improve the growth of non-layered NiSe films on Ni foil by solid state reaction between ZnSe film and Ni foil. It is found that the mechanism of NiSe thin film growth is the interdiffusion of Ni and Zn to form NiSe thin film. The crystal size of NiSe thin film is up to micron. The NiSe thin film photodetector is constructed by graphical growth. It not only satisfies the integration of photodetectors in sensing and image systems, but also has a response of 150A / W to the photodetectors constructed of high quality NiSe thin films. The responsivity of photodetectors is much higher than that of photodetectors prepared by direct deposition of nanocrystalline NiSe films, and the responsivity is increased by 4 orders of magnitude.
【学位授予单位】：合肥工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN36;TB383.2

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