毫米波预失真线性化技术研究
发布时间:2018-04-29 15:24
本文选题:毫米波 + 肖特基二极管 ; 参考:《中国工程物理研究院》2012年硕士论文
【摘要】:现代无线通信系统对功率放大器线性度的要求逐渐提高,单纯通过功率回退的方式来改善非线性失真成本较高,效果不太理想,而采用线性化技术与功率回退相结合的办法,可以在保证功放效率的同时满足系统线性度的要求。目前,毫米波固态功放的线性化主要采用预失真技术,国外对毫米波预失真技术已经开展了较深入的研究工作,并取得了一系列的成果,而国内对预失真技术的研究还处于起步和探索阶段,本课题在此背景下开展了毫米波预失真线性化技术的研究。 本文主要进行了基于肖特基二极管非线性特性的预失真线性化技术研究,最终研制的Ka波段预失真线性化器,与饱和功率为37dBm的固态功放级联调试,该线性化器在输出功率从1dB压缩点回退5dB处对功放的三阶交调失真有11dBc的改善,达到了-33dBc,达到了预期指标要求。 通过课题研究得到的一系列设计、仿真与调试方法可用于不同毫米波频段的预失真线性化器研制中。
[Abstract]:The demand for linearity of power amplifier in modern wireless communication system is increasing gradually. The cost of improving nonlinear distortion is high and the effect is not ideal. The method of combining linearization technology with power back is adopted. It can satisfy the requirement of system linearity while ensuring the efficiency of power amplifier. At present, the linearization of millimeter-wave solid-state power amplifier mainly adopts predistortion technology. Abroad, the millimeter-wave predistortion technology has been studied deeply, and a series of achievements have been made. However, the research of pre-distortion technology in China is still at the beginning and exploration stage. In this background, the research of millimeter-wave pre-distortion linearization technology is carried out. In this paper, the predistortion linearization technology based on the nonlinear characteristics of Schottky diodes is studied. Finally, the Ka-band predistortion linearizer is designed and debugged in cascade with solid-state power amplifier with saturated power of 37dBm. This linearizer improves the third-order crossover distortion of power amplifier at the point of output power from 1dB compression point back to 5dB, and achieves -33dBc, which meets the expected requirements. A series of design, simulation and debugging methods can be used in the development of predistortion linearizer in different millimeter-wave bands.
【学位授予单位】:中国工程物理研究院
【学位级别】:硕士
【学位授予年份】:2012
【分类号】:TN722.75
【参考文献】
相关期刊论文 前1条
1 胡建学;宋华山;丁德胜;;导频前馈功率放大器线性化技术的研究[J];电子器件;2007年03期
,本文编号:1820506
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