X波段GaN MMIC功率放大器设计

发布时间：2018-04-30 11:55

本文选题：GaN + HEMT　；参考：《西安电子科技大学》2015年硕士论文

【摘要】：GaN高电子迁移率晶体管(HEMT)具有高功率密度、高击穿电压、高输出功率等优良特性,被认为是下一代微波功率器件极具潜力的候选者,成为近年来研究的热点。基于GaN HEMT研制的单片微波功率放大器具有高输出功率、高工作电压、频带宽等特点,已经广泛用于相控阵雷达,无线通讯技术和航空航天等领域中。本论文针对AlGaN/GaN HEMT功率器件以及GaN MMIC功率放大器的设计进行了深入研究,实现了一款X波段两级GaN MMIC功率放大器,主要的研究内容和成果如下:1.基于实验室自主研制的AlGaN/GaN HEMT器件,分析了GaN HEMT器件的基本理论,并对器件的性能进行了测试和分析,建立了该器件的小信号等效电路模型,为验证此模型,获得了S参数的测试结果和模型仿真结果,此二者的吻合度较高,表明采用的22元件小信号模型精确、稳定而且物理意义明确。2.研究了GaN MMIC功率放大器的主要性能指标和设计原理,采用了S参数结合LoadPull测试结果的综合设计方法,解决了GaN HEMT微波功率放大器设计中晶体管无成熟大信号模型的问题,为电路的设计提供了技术支持。3.总结了GaN MMIC功率放大器的设计流程和拓扑结构,设计实现了一款具有平坦增益的两级GaN MMIC功率放大器。采用低通匹配网络设计,使放大器输入输出匹配到50?,最终的电磁场仿真结果表明,该电路在9.0-10.2GHz工作频率范围内小信号增益S21为23(?)0.5dB,输入反射系数S11小于-8dB,输出反射系数S22小于-6dB,且该电路在全频带内的仿真稳定因子显示其具有良好的稳定性。最后对微带线进行了合理的布局,画出了相应的版图结构,并依据实验室现有的工艺水平,提出了实现MMIC功率放大器的工艺方法,并对相关工艺的关键点进行分析。
[Abstract]:GaN (High Electron Mobility Transistor) is a promising candidate for the next generation microwave power devices due to its high power density, high breakdown voltage and high output power. The monolithic microwave power amplifier based on GaN HEMT has been widely used in phased array radar, wireless communication technology, aerospace and other fields because of its high output power, high working voltage, frequency bandwidth and so on. In this paper, the design of AlGaN/GaN HEMT power devices and GaN MMIC power amplifiers is studied, and an X-band two-stage GaN MMIC power amplifier is implemented. The main research contents and results are as follows: 1. Based on the AlGaN/GaN HEMT device developed by the laboratory, the basic theory of GaN HEMT device is analyzed, the performance of the device is tested and analyzed, and the small signal equivalent circuit model of the device is established to verify the model. The test results of S parameters and the simulation results are obtained, which show that the 22 components small signal model is accurate, stable and physical meaning is clear. 2. The main performance index and design principle of GaN MMIC power amplifier are studied. The synthesis design method of S parameter combined with LoadPull test result is adopted to solve the problem that transistor has no mature large signal model in the design of GaN HEMT microwave power amplifier. It provides technical support for circuit design. The design flow and topology of GaN MMIC power amplifier are summarized. A two-stage GaN MMIC power amplifier with flat gain is designed and implemented. A low-pass matching network is used to match the input and output of the amplifier to 50g. The simulation results show that, The small signal gain S21 is 0.5 dB in the 9.0-10.2GHz operating frequency range, the input reflection coefficient S11 is less than -8 dB, and the output reflection coefficient S22 is less than -6 dB. The simulation stability factor of the circuit in the full frequency band shows that the circuit has good stability. Finally, the reasonable layout of the microstrip line is given, and the corresponding layout structure is drawn. According to the existing technology level in the laboratory, the process method of realizing the MMIC power amplifier is put forward, and the key points of the related technology are analyzed.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75;TN386

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