硅基微通道板结构与增益特性研究

发布时间：2018-04-30 12:42

本文选题：硅基微通道板 + 二次电子发射　；参考：《深圳大学》2015年硕士论文

【摘要】：微通道板(Micro-channel plate,MCP)是一种二维连续电子倍增的电真空器件,由许多具有连续电子倍增能力的通道按一定的几何图案排列而成。当在其输入、输出两端加上一定的电场时,就能对极其微弱的二维电子图像进行倍增或放大。然而,在90年代以后美国伽利略公司提出的一种全新的半导体技术,它就是先进技术微通道板,它最大的突破就是把基体材料和打拿极材料分开,同时微孔阵列制备和连续打拿极制备技术分开,因此微通道板的运用更加宽广,制备工艺更加灵活。目前,由于硅材料广泛应用于大规模集成电路领域,人们对它的研究相对深入,并且制备技术较成熟,吸引了大量的科研人员对硅基微通道板刻蚀工艺和打拿极制作的研究。本论文中,首先广泛调研相关文献,掌握硅基微通道板的结构特点、发展类型以及工作原理;然后通过对微通道板增益特性分析与通道内二次电子发射机理研究,建立数学理论模型,采用MATLAB进行模拟,从理论上分别分析了二次电子发射特性以及MCP电流增益跟各因素之间的关系;接着为了探究硅基微通道板提高增益的方法,从次级电子发射体选择和优化打拿极结构两方面出发,分析了几种不同二次电子发射层材料(以Mg O、Al2O3、Si O2薄膜为例)的二次电子发射特性,提出了绝缘层-导电层-第一发射层-第二发射层的打拿极结构,通过理论分析打拿极各层较好的材料选择,对打拿极每一层结构的厚度进行优化;最后,在制作工艺上,利用本所现有的PECVD(等离子增强化学气相沉积)设备、匀胶机、光刻机(适用于3英寸及以下硅片)、RIE机(OXFORD Plasmalab 80Plus)、IPC刻蚀机等设备,完成对硅基MCP的刻蚀。采用热氧化工艺、原子层沉积技术制备打拿极的各层材料,得到硅基微通道板样品。最后,初步探究了利用LGW飞秒激光器打孔制备硅深孔阵列的实验方法,证明激光打孔方法的可行性。
[Abstract]:Micro-Channel Plate (MCP) is a two-dimensional continuous electron multiplication vacuum device, which is made up of many channels with continuous electron multiplication ability arranged according to certain geometric patterns. When a certain electric field is applied to the input and output, the extremely weak two-dimensional electronic image can be multiplied or amplified. However, after the 1990s, the Galileo Company of the United States put forward a new kind of semiconductor technology, which is the advanced technology microchannel board. Its biggest breakthrough is to separate the matrix material from the take-away material. At the same time, the fabrication of microporous array is separated from that of continuous drawing, so the application of microchannel plate is wider and the preparation process is more flexible. At present, because silicon materials are widely used in the field of large scale integrated circuits, the research on silicon materials is relatively deep, and the preparation technology is relatively mature, which attracts a large number of researchers to study the etching process and the making of electrodes of silicon based microchannel plates. In this thesis, we firstly investigate the relevant literature, and master the structure characteristics, development types and working principle of silicon based microchannel plate, and then analyze the gain characteristics of microchannel plate and the mechanism of secondary electron emission in the channel. The mathematical model was established and simulated by MATLAB. The characteristics of secondary electron emission and the relationship between MCP current gain and various factors were analyzed theoretically. Based on the selection of secondary electron emitters and the optimization of the structure of the secondary electron emitters, the secondary electron emission characteristics of several different secondary electron emitter layers (taking MgO _ 2O _ 3 Al _ 2O _ 3 Si _ 2O _ 2 film as an example) are analyzed. In this paper, the structure of the dielectric layer, the conductive layer, the first emitter layer and the second emitter layer is proposed. The thickness of each layer structure is optimized through theoretical analysis of the better material selection of each layer. Finally, in the manufacturing process, Using the existing PECVD (Plasma enhanced Chemical Vapor deposition) equipment, leveling machine, lithography machine (suitable for 3 inch or less silicon wafer / lie machine / OXFORD Plasmalab 80Plus / IPC etching machine, etc.), the etching of silicon-based MCP has been completed. Si-based microchannel plate samples were prepared by thermal oxidation and atomic layer deposition. Finally, the experimental method of fabricating silicon deep hole array by LGW femtosecond laser drilling is discussed, and the feasibility of laser drilling method is proved.
【学位授予单位】：深圳大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN103

【参考文献】