一种宽温范围高稳定CMOS带隙基准源

发布时间：2018-04-30 17:59

  本文选题：带隙基准源 + 宽温度范围　； 参考：《微电子学》2016年06期

【摘要】：在传统带隙基准源的基础上,设计了一种在极宽温度范围内具有高温度稳定性的CMOS带隙基准电路。该电路将三极管的集电极置于负反馈环路中,以避免三极管基极分流对集电极电位的影响,实现温度补偿。通过采用低电源抑制比(PSRR)的差分运放,可以得到不受电源电压影响的基准电压。基于0.5μm CMOS标准工艺实现,采用Spectre进行仿真,结果表明:该带隙基准源在室温下产生的基准电压为(1.256 9±0.000 32)V,在-35℃~125℃温度范围内的温漂系数为1.39×10~(-6)/℃;当工作电压为1.8~4.6V时,输出电压仅变化0.31mV/V;3V供电下的功耗为14.69μW;满足胎压监测芯片的设计要求。
[Abstract]:Based on the traditional bandgap reference source, a CMOS bandgap reference circuit with high temperature stability in a wide temperature range is designed. In this circuit, the collector of the transistor is placed in a negative feedback loop to avoid the effect of the base shunt of the transistor on the collector potential and to realize temperature compensation. By using differential operational amplifier with low power supply rejection ratio (PSRR), a reference voltage independent of the power supply voltage can be obtained. Based on the standard process of 0.5 渭 m CMOS and Spectre simulation, the results show that the reference voltage of the bandgap reference source is 1.2559 卤0.000 32V at room temperature, and the temperature drift coefficient is 1.39 脳 10 ~ (-1) ~ (-6) / 鈩，

本文编号：1825591