当前位置:主页 > 科技论文 > 电子信息论文 >

用于脑电信号记录的低噪声低功耗放大器

发布时间:2018-04-30 19:18

  本文选题:放大器 + 脑电信号(EEG) ; 参考:《半导体技术》2017年08期


【摘要】:为了满足脑电信号(EEG)记录阵列的应用需求,设计了一种全差分的低噪声、低功耗放大器电路。该电路利用亚阈值区晶体管作为伪电阻,与输入电容和反馈电容形成高通通路,有效抑制了输入信号的直流失调电压,无需片外隔直电容,实现了电路的全集成。放大器中的跨导放大器(OTA)采用亚阈值晶体管进行设计,实现了较大的输出摆幅、良好的功耗和噪声性能。放大器电路采用SMIC 130 nm 1P8M混合信号工艺实现,芯片面积0.6 mm~2。测试结果表明,在电源电压0.6 V时,放大器可处理信号带宽为10 Hz~7 kHz,等效输入噪声的均方根值为3.976μV,噪声有效因子为3.658,总功耗仅为2.4μW。
[Abstract]:In order to meet the requirements of EEG recording array, a fully differential low noise and low power amplifier circuit is designed. The circuit uses sub-threshold transistor as pseudoresistor and forms a high-pass path with input capacitance and feedback capacitance, which effectively restrains the DC offset voltage of input signal, and does not need the out-of-chip capacitance to realize the full integration of the circuit. The transconductance amplifier (OTA) in the amplifier is designed with sub-threshold transistor, which achieves large output swing, good power consumption and noise performance. The amplifier circuit is realized by SMIC 130nm 1P8M mixed signal technology. The chip area is 0.6 mm / 2. The test results show that when the power supply voltage is 0.6 V, the signal bandwidth is 10 Hz~7 kHz, the root mean square value of the equivalent input noise is 3.976 渭 V, the noise efficiency factor is 3.658, and the total power consumption is only 2.4 渭 W.
【作者单位】: 厦门理工学院光电与通信工程学院;
【基金】:国家自然科学基金资助项目(61306039)
【分类号】:TN722.3

【参考文献】

相关期刊论文 前5条

1 侯云虹;张萌;韩国威;司朝伟;赵咏梅;宁瑾;;A review: aluminum nitride MEMS contour-mode resonator[J];Journal of Semiconductors;2016年10期

2 毛怿奇;高同强;许晓冬;杨海钢;蔡新霞;;A fully integrated CMOS super-regenerative wake-up receiver for EEG applications[J];Journal of Semiconductors;2016年09期

3 高波;杨晶;蒋思;王德波;;Application of the thermoelectric MEMS microwave power sensor in a power radiation monitoring system[J];Journal of Semiconductors;2016年08期

4 彭波华;骆伟;赵继聪;袁泉;杨晋玲;杨富华;;Frequency stability of an RF oscillator with an MEMS-based encapsulated resonator[J];Journal of Semiconductors;2015年07期

5 刘雄;姚言;马嘉豪;张煈航;王谦;张兆华;任天令;;Micro packaged MEMS pressure sensor for intracranial pressure measurement[J];Journal of Semiconductors;2015年06期

【共引文献】

相关期刊论文 前5条

1 陈铖颖;陈黎明;杨骏;;用于脑电信号记录的低噪声低功耗放大器[J];半导体技术;2017年08期

2 Yapeng Sun;Huidong Zhao;Shushan Qiao;Yong Hei;Fuhai Zhang;;A high-accuracy DCO with hybrid architecture[J];Journal of Semiconductors;2017年07期

3 Xiaofeng Zhao;Dandan Li;Yang Yu;Dianzhong Wen;;Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor[J];Journal of Semiconductors;2017年07期

4 徐卫林;吴迪;韦雪明;韦保林;段吉海;归发弟;;Low-noise sub-harmonic injection locked multiloop ring oscillator[J];Journal of Semiconductors;2016年09期

5 高波;杨晶;蒋思;王德波;;Application of the thermoelectric MEMS microwave power sensor in a power radiation monitoring system[J];Journal of Semiconductors;2016年08期

【二级参考文献】

相关期刊论文 前10条

1 刘博;陈晓;蔡华林;穆罕默德·阿里·穆罕默德;田祥光;陶璐琪;杨轶;任天令;;Surface acoustic wave devices for sensor applications[J];Journal of Semiconductors;2016年02期

2 刘雄;姚言;马嘉豪;张煈航;王谦;张兆华;任天令;;Micro packaged MEMS pressure sensor for intracranial pressure measurement[J];Journal of Semiconductors;2015年06期

3 王锁成;郝永平;刘双杰;;The design and analysis of a MEMS electrothermal actuator[J];Journal of Semiconductors;2015年04期

4 杨健;韩国威;司朝伟;赵永梅;宁瑾;;氮化铝面内伸缩模态谐振器的研究现状[J];微纳电子技术;2014年06期

5 Yanhang Zhang;Zhaohua Zhang;Bo Pang;Li Yuan;Tianling Ren;;Tiny MEMS-Based Pressure Sensors in the Measurement of Intracranial Pressure[J];Tsinghua Science and Technology;2014年02期

6 周斌;高杨;何移;李君儒;何婉婧;;薄膜体声波谐振器温度-频率漂移特性分析[J];压电与声光;2014年02期

7 尚正国;李东玲;温志渝;赵兴强;;The fabrication of vibration energy harvester arrays based on AlN piezoelectric film[J];Journal of Semiconductors;2013年11期

8 方志强;毛旭;杨晋玲;杨富华;;Low temperature Sn-rich Au Sn wafer-level bonding[J];Journal of Semiconductors;2013年10期

9 朱文锐;杨海钢;高同强;刘飞;程小燕;张丹丹;;A baseband circuit for wake-up receivers with double-mode detection and enhanced sensitivity robustness[J];Journal of Semiconductors;2013年08期

10 刘彤;廖小平;王德波;;Sensitivity of MEMS microwave power sensor with the length of thermopile based on Fourier equivalent model[J];半导体学报;2011年07期

【相似文献】

相关硕士学位论文 前1条

1 黄群峰;脑电信号检测专用集成电路设计研究[D];华侨大学;2007年



本文编号:1825836

资料下载
论文发表

本文链接:https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/1825836.html


Copyright(c)文论论文网All Rights Reserved | 网站地图 |

版权申明:资料由用户4325e***提供,本站仅收录摘要或目录,作者需要删除请E-mail邮箱bigeng88@qq.com