基于忆阻器的耦合行为与突触电路研究

发布时间：2018-05-02 18:07

本文选题：忆阻器 + 耦合效应　；参考：《西南大学》2017年硕士论文

【摘要】：随着电子技术和材料工艺的发展,复杂信息处理的方式越来越高效简洁。作为纳米级材料的最新成果,忆阻器将磁通量和电荷联系起来,并且带有记忆特性,加上其天然的纳米级尺寸,受到了学术界和工业界的极大关注和研究。同时,忆阻器能够模拟人类大脑中突触的记忆功能,这有望彻底改变计算机的工作方式和信息处理方式。本文分析了忆阻器的研究现状,紧接着总结了忆阻器相关数学模型的理论和仿真。然后,对忆阻器间的耦合行为进行了详细分析,探讨了初始阻值对忆阻器工作范围的影响。最后,对忆阻桥突触电路进行了相关分析和仿真实验,并且针对其不足进行了改进。首先,本文分析了惠普忆阻器、自旋忆阻器和磁控耦合忆阻器的数学模型,并且进行了理论分析和仿真实验。其次,在磁控忆阻器的基础上构建了磁控耦合忆阻器的数学模型,总结了不同连接方向下的忆阻器串并联的耦合行为,而且利用设计的图形用户界面直观的展示了耦合忆阻器的关系曲线。然后,讨论了不同初始忆阻值下,忆阻器正常工作范围的变化。紧接着利用Pspice仿真电路,从电路的方向出发,再次展示了忆阻器之间的耦合行为。最后,对忆阻桥突触电路权重的更新规则进行了详细说明,并且利用电路仿真软件对其进行了仿真实验。本文对忆阻桥突触电路进行了改进,构建了新型的忆阻桥突触电路,节省了电流信号和电压信号之间相互转换的过程。
[Abstract]:With the development of electronic technology and material technology, the mode of complex information processing is becoming more and more efficient and succinct. As the latest achievement of nanomaterials, the memristor connects magnetic flux and charge with memory characteristics, coupled with its natural nanoscale size, and has received great attention and research from the academic and industrial circles. The device can simulate the memory function of the synapse in the human brain, which is expected to completely change the working mode of the computer and the way of information processing. This paper analyzes the current research status of the memristor, and then summarizes the theory and Simulation of the mathematical model of the memristor. Then, the coupling behavior between the memristors is analyzed in detail, and the initial method is discussed. The influence of the resistance on the working range of the memristor. Finally, the correlation analysis and simulation experiment of the memristor bridge circuit are carried out, and the defects are improved. First, the mathematical model of the HP memristor, the spin memristor and the magnetic control coupled memristor is analyzed, and the theoretical analysis and simulation experiments are carried out. Secondly, in the magnetic control The mathematical model of the magnetron coupled memristor is built on the basis of the memristor, and the coupling behavior of the series and parallel of the memristor under different connection directions is summarized, and the relationship curve of the coupled memristor is displayed intuitively by the designed graphical user interface. Then, the change of the normal working range of the memristor under different initial recristors is discussed. Then, using the Pspice simulation circuit, the coupling behavior between the memristors is shown again from the direction of the circuit. Finally, the updating rules of the synaptic circuit weight of the memristor bridge are explained in detail, and the simulation experiment is carried out with the circuit simulation software. The memristor synaptic circuit saves the conversion process between current signals and voltage signals.

【学位授予单位】：西南大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN60

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