聚合物场效应晶体管的制备以及性能研究

发布时间：2018-05-03 06:28

  本文选题：有机场效应晶体管 + 共轭聚合物　； 参考：《北京化工大学》2015年硕士论文

【摘要】：与传统无机场效应晶体管相比,有机场效应晶体管(OFETs),尤其是聚合物场效应晶体管,具有成本低,制备工艺简单,可制成大面积柔性器件等优点而备受人们关注。但是目前聚合物场效应晶体管的迁移率及稳定性与无机场效应晶体管相比仍较低,还不能完全满足实际应用的需求。为了提高聚合物场效应晶体管的性能,本论文主要从材料的选择与器件的优化两个方面开展研究,具体如下：1、以萘并二杂环为给体单元的四个聚合物P(NDT3-BT), P(NDT3-BO),P(NDF3-BT)和P(NDF3-BO)为有机半导体层制备了OFETs器件,对器件的电学性能进行研究,分析了聚合物主链中硫和氧原子对OFETs性能产生的影响。同时对聚合物薄膜的形貌结构进行了表征。发现在聚合物半导体薄膜中,基于萘并二噻吩的给-受体共聚物比基于萘并二呋喃的给-受体共聚物有更紧密的分子排列,使相应的器件表现出更好的场效应性能。2、在共轭聚合物PNDF3DPP-C24和PNDF3IID-C24分子中,以萘并二呋喃为给体单元,受体单元分别为二吡咯(DPP)和异靛蓝(IID)。利用这两个聚合物构筑了底栅底接触结构的场效应晶体管器件,沟道长度为50μm、沟道宽度为1400[μm且退火温度为120℃时,得到最佳的器件性能。其中PNDF3DPP-C24的迁移率为5.31 cm2 V-1 s-1,而PNDF3IID-C24的迁移率为3.35 cm2 V-1 s-1。利用AFM和GIXRD对聚合物的薄膜性能和结晶性进行表征,并依据其结果解释了该类材料具有优秀场效应晶体管器件性能的原因。3、以烷基苯取代的萘并二噻吩和DPP构建的2-D共轭聚合物(PNDTP-DPP)为研究对象,采用溶液法制备聚合物薄膜并构筑了OFETs器件,研究了共轭侧链对聚合物材料及其器件载流子传输性能的影响。实验发现,聚合物薄膜中分子间具有强的相互作用,因此其π-π堆积距离只有3.7A。该强的分子间相互作用使PNDTP-DPP表现出良好的场效应性能,其空穴迁移率达到0.86 cm2 V-1 s-1,表明共轭侧链减小了分子链之间的距离,有效提高了载流子在分子链之间的跳跃传输能力。
[Abstract]:Compared with the traditional inorganic field effect transistors, the field effect transistors, especially the polymer field effect transistors, have many advantages, such as low cost, simple fabrication process, large area flexible devices and so on. However, the mobility and stability of polymer field effect transistors are still low compared with inorganic field effect transistors. In order to improve the performance of polymer field-effect transistors, this thesis mainly focuses on the selection of materials and the optimization of devices. As follows: 1, OFETs devices were prepared by using four polymers, PNDT3-BTN, PNDT3-BOF3-BTN and PNDT3-BONF3-BOO) as organic semiconductor layers. The electrical properties of the devices were studied. The effects of sulfur and oxygen atoms in the main chain of the polymer on the properties of OFETs were analyzed. At the same time, the morphology and structure of polymer films were characterized. It is found that in polymer semiconductor films, the copolymers based on naphthalene dithiophene have closer molecular arrangement than those based on naphthalene difurans. In the conjugated polymer PNDF3DPP-C24 and PNDF3IID-C24, naphthalene difuran was used as donor unit, and the receptor units were dipyrrolidine (DPP) and isoindigo (IIDD), respectively. The FET devices with bottom gate bottom contact structure are constructed by using these two polymers. The optimal device performance is obtained when the channel length is 50 渭 m, the channel width is 1400 [渭 m, and annealing temperature is 120 鈩，

本文编号：1837396