离子束刻蚀制作中阶梯光栅研究

发布时间：2018-05-04 15:47

本文选题：中阶梯光栅 + 同质掩模　；参考：《苏州大学》2015年硕士论文

【摘要】：本文围绕全息离子束刻蚀制作闪耀光栅的工艺特点,对全息离子束刻蚀制作中阶梯光栅的具体工艺进行深入研究。主要包含了以下几个方面的内容。首先,介绍了中阶梯光栅的特点,以及制作中阶梯光栅两种常用的方法：机械刻划和单晶硅湿法刻蚀法。介绍了国内外对中阶梯光栅的研究现状。并探讨了使用离子束刻蚀制作中阶梯光栅的意义。简要介绍了离子源系统以及模拟离子束刻蚀的线段运动算法。主要分析了线段算法形成槽形轮廓的过程、演化进程中线段交点的处理方法和处理表面拐角、边缘时去点的几种情况。理论分析了制作55°中阶梯光栅所需要同质掩模的槽形结构。基于直接制作大闪耀角槽形对同质掩模的要求较高且制作难度较大,通过制作35°闪耀角对应的反闪耀角55°,来实现中阶梯光栅槽形的制作。详细叙述了同质掩模制作过程中的工艺方法。运用刻蚀光刻胶和铬双层掩模来制作同质掩模,对比分析了刻蚀铬掩模的两种方法：干法离子束刻蚀和湿法腐蚀液腐蚀。实验中运用了反应离子刻蚀(RIE)刻蚀双层掩模,制作了槽形与理论分析要求相近的同质掩模。实验制作中,我们使用RIE刻蚀制作同质掩模,然后通过Ar离子束倾斜刻蚀同质掩模,制作出了80线/毫米,闪耀角为52.5°,反闪耀角为27.8°的中阶梯光栅。通过理论分析,计算了入射波长在450nm-700nm,入射角为52.5°时理想中阶梯光栅槽形和实验制作槽形的衍射效率,分析比较了两者的差异。对实际槽形进行衍射效率测量,并与理论计算值进行了比较。
[Abstract]:Based on the technological characteristics of holographic ion beam etching for making blazed gratings, the specific process of step gratings in holographic ion beam etching is studied in this paper. Mainly contains the following aspects of the content. Firstly, the characteristics of middle step gratings are introduced, and two common methods in fabrication are introduced: mechanical etching and wet etching of monocrystalline silicon. The research status of middle step grating at home and abroad is introduced. The significance of step gratings in fabrication by ion beam etching is also discussed. The ion source system and the line segment motion algorithm for simulating ion beam etching are briefly introduced. This paper mainly analyzes the process of line segment algorithm forming groove contour, the processing method of line segment intersection in the evolution process, and several cases of processing surface corner and edge point. The groove structure of the homogeneous mask needed for 55 掳step grating fabrication is theoretically analyzed. Based on the high requirement and difficulty to fabricate the homogeneous mask directly, the grooves of the middle step grating can be fabricated by making the reverse blazing angle 55 掳corresponding to the 35 掳blaze angle. The manufacturing process of homogeneous mask is described in detail. Two methods of etching chromium mask, dry ion beam etching and wet etching solution, are compared and analyzed by using etching photoresist and chromium double-layer mask to make homogeneous mask. In the experiment, the double layer mask was etched by reactive ion etching (RIEs), and the homogeneous mask with similar groove shape and theoretical requirement was made. In the experiment, we used RIE to fabricate homogeneous mask, then we made the middle step grating with 80 lines / mm, 52.5 掳blazing angle and 27.8 掳reverse blazing angle by ar ion beam oblique etching homogeneous mask. Through theoretical analysis, the diffraction efficiency of the ideal grating grooves and experimental grooves is calculated at an incident wavelength of 450 nm to 700 nm and an incident angle of 52.5 掳, and the differences between the two are analyzed and compared. The diffraction efficiency of the actual groove is measured and compared with the theoretical calculation.
【学位授予单位】：苏州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：O436.1;TN305.7

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