N型准一维ZnS纳米带的可控合成及肖特基器件的研究

发布时间：2018-05-04 16:08

本文选题：ZnS + 纳米带　；参考：《合肥工业大学》2015年硕士论文

【摘要】：Ⅱ-ⅥI族的ZnS材料在室温时的禁带宽度为3.7eV,是一种在光电子器件应用领域具有很大开发潜力的宽禁带半导体材料,对其纳米结构的研究尤为引人注目。目前对ZnS纳米结构的研究主要集中在合成、微结构控制和表征以及光学特性方面,而对于其电输运和器件应用方面的研究还很少。造成这种情况的主要原因在于,纳米材料的高比表面积使得ZnS材料具有高表面态,这使得它的欧姆接触的获得非常困难。现有器件研究仅限于场效应晶体管等简单结构的器件,像肖特基势垒二极管等重要的器件原型还没有涉及。本文中我们采用化学气相沉积法合成了Cl掺杂n型ZnS纳米带。ZnS薄膜研究显示Cl元素为优质的n型掺杂元素,掺杂效率高,引入缺陷少。基于单根ZnS纳米带场效应晶体管的检测显示合成的ZnS:Cl纳米带n型电输运特点明显,掺杂后的电子迁移率和浓度分别为64.9cm2V-2s-1和5.7x1017cm-3。ZnS纳米带的欧姆电极采用激光脉冲沉积方法结合铜掩膜板遮蔽的方法制备。而铜掩膜板是利用光刻工艺和刻蚀技术制备,它的使用可以成功地将精确的电极形状转移到沉积基底上,同时可以避免光刻胶对纳米材料表面的污染。在此基础上,我们构建了基于ZnS：C1纳米带与金(Au)异质结的肖特基二极管。该二极管表现出良好的的整流特性(整流比大于103),肖特基势垒高度约为0.64eV,理想因子在320K时为1.05。并且肖特基势垒二极管在365nm紫外光照射下,在正偏压时表现出负光响应而在负偏压下表现出正的光响应,我们利用能带理论对这种现象进行了解释。通过计算得到负偏压时器件的增益和响应度分别为9.1 AW-1和33,开关比达180,与同类型光电探测器相比,性能优异。
[Abstract]:The band gap of the ZnS material of the II - VI I family at room temperature is 3.7eV. It is a wide band gap semiconductor material which has great potential in the application of optoelectronic devices. The research on its nanostructures is particularly attractive. At present, the research of ZnS nanostructures is mainly focused on the synthesis, micro structure control and characterization and optical properties. The main reason for this is that the high surface area of the nanomaterials makes the ZnS material have a high surface state, which makes it difficult to obtain the ohmic contact. The existing device research is limited to the simple structures such as the field response transistor, such as Schottky. An important device prototype such as barrier diode has not been involved. In this paper, Cl doped n type ZnS nanoribbon.ZnS films have been synthesized by chemical vapor deposition (CVD), and the study shows that Cl elements are high quality n doped elements, with high doping efficiency and few defects. ZnS:Cl nano based on single root ZnS nano band field effect transistor detection and display The electrical transport characteristics with N type are obvious. The electron mobility and concentration of the doped 64.9cm2V-2s-1 and 5.7x1017cm-3.ZnS nanoribbons are prepared by laser pulse deposition combined with the mask of copper mask. The copper mask plate is prepared by photolithography and etching, and its use can be successfully used. The shape of the electrode is transferred to the substrate and can avoid the pollution of the photoresist on the surface of the nanomaterial. On this basis, we have constructed a Schottky diode based on the ZnS:C1 nanometers and the gold (Au) heterojunction. The diode shows good rectifying characteristics (the rectifying ratio is greater than 103), the Schottky barrier height is about 0.64eV, and the ideal cause is The 320K is 1.05. and the Schottky barrier diode is irradiated by 365nm ultraviolet light, showing negative light response at positive bias and positive light response under the negative bias. We use the energy band theory to explain this phenomenon. The gain and response degree of the device are 9.1 AW-1 and 33 respectively by calculating the negative bias voltage. The ratio is 180, which is superior to the same type of photodetector.

【学位授予单位】：合肥工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.1;TN386

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