基于纳米结构增强LED发光效率的研究

发布时间：2018-05-04 18:11

本文选题：氮化镓 + 发光二极管　；参考：《中国石油大学(华东)》2015年硕士论文

【摘要】：GaN作为新一代半导体材料,具有禁带宽度大、热导率高、载流子迁移率高、发光效率高等优点,是理想的短波长LED器件的制备材料。GaN基LED器件凭借节能环保、响应速度快、体积小、效率高等特点,已广泛应用于固态照明、背光源等领域。但GaN基LED的发展仍面临许多难题,例如效率下降现象:在大电流工作条件下,LED器件的发光效率出现下降的现象。至于效率下降现象的原因,至今仍未有定论。许多学者对此现象进行研究,提出了以下几种可能来解释效率下降现象:电子泄露、载流子注入效率低、Auger复合、结温等。抑制效率下降现象一直是改善GaN基LED器件性能的关键问题之一。在本文中,首先,介绍了发光二极管的发展及其国内外的研究现状和研究意义;其次,简要介绍了氮化镓材料的基本特性,电子阻挡层和多量子阱结构,并理解了效率下降现象;然后,对模拟用APSYS软件作简要介绍,并详细阐述了其数值模拟基本模型与理论;最后,给出了数值模拟数据以及所提出的InGaN/AlGaN/GaN多量子阱电子阻挡层结构。通过数据分析,所提出的InGaN/AlGaN/GaN多量子阱电子阻挡层能够有效的提高器件的光学性能和电学性能。模拟的电子阻挡层获得了更大的势垒高度,使其更有效的限制电子的泄露,同时,多量子阱主动区内的电子与空穴浓度有所提升,且分布更加均匀。相对于传统LED结构,我们所提LED结构的输出功率和内量子效率分别提高了12.7%和12.3%,此外,效率下降由37.1%降至31.1%,最大内量子效率由0.817升至0.838。InGaN/AlGaN/GaN多量子阱电子阻挡层的应用,使得模拟用LED器件的光输出功率、内量子效率和势垒高度都有了很大的提高,证明了此电子阻挡层能够有效的抑制效率下降现象。
[Abstract]:As a new generation semiconductor material, GaN has many advantages, such as wide band gap, high thermal conductivity, high carrier mobility and high luminescence efficiency. It is an ideal short wavelength LED device fabrication material. Gan based LED device has the advantages of energy saving, environmental protection and fast response speed. Small size, high efficiency and other characteristics, has been widely used in solid state lighting, backlight and other fields. However, the development of GaN based LED still faces many difficulties, for example, the phenomenon of efficiency decline: under the condition of high current operation, the luminous efficiency of GaN device decreases. As for the reasons for the decline in efficiency, there is still no conclusion. Many scholars have studied this phenomenon and put forward the following possibilities to explain the phenomenon of efficiency decline: electron leakage, low carrier injection efficiency and Auger complex, junction temperature, and so on. One of the key problems in improving the performance of GaN-based LED devices is to suppress the decrease of efficiency. In this paper, firstly, the development of light-emitting diodes and its research status and significance at home and abroad are introduced. Secondly, the basic properties of gallium nitride materials, electronic barrier layer and multi-quantum well structure are briefly introduced. Then, the basic model and theory of numerical simulation are introduced in detail. Finally, the numerical simulation data and the proposed electronic barrier structure of InGaN/AlGaN/GaN multiple quantum wells are given. Through data analysis, the proposed InGaN/AlGaN/GaN multiple quantum well electronic barrier layer can effectively improve the optical and electrical properties of the device. The simulated barrier layer gains a higher barrier height, which makes it more effective to limit the leakage of electrons. At the same time, the concentration of electrons and holes in the active region of multiple quantum wells is increased and the distribution is more uniform. Compared with the traditional LED structure, the output power and internal quantum efficiency of the proposed LED structure are increased by 12.7% and 12.30.In addition, the efficiency decreases from 37.1% to 31.1%, and the maximum internal quantum efficiency increases from 0.817 to the application of the 0.838.InGaN/AlGaN/GaN multiple quantum well electron barrier layer. The optical output power, internal quantum efficiency and barrier height of the analog LED device are greatly improved, which proves that the electron barrier layer can effectively suppress the phenomenon of efficiency decline.
【学位授予单位】：中国石油大学(华东)
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN312.8

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