埋栅4H-SiC静电感应晶体管结构设计优化和特性研究

发布时间：2018-05-05 11:28

本文选题：4H-SiC + 静电感应晶体管　；参考：《兰州交通大学》2017年硕士论文

【摘要】：在过去的70年中,半导体行业在电路设计领域发展迅速,更高集成度的半导体芯片以18个月翻倍器件数目的速度推进了一代代新的电子产品的出现。与之相比,半导体材料和半导体器件研究领域的发展现状就显得不尽人意。目前占领半导体材料市场的依旧是最早使用的半导体材料Si,在半导体器件尤其是电力电子器件领域,晶闸管等老式器件依旧是大规模商业生产的主流。SiC材料被认为是未来最有可能替代Si材料的新型半导体材料,而静电感应晶体管也是正在蓬勃发展的新型半导体器件。因此,对SiC衬底材料的静电感应晶体管的研发是很有研究前景的课题。本论文选题基于电力电子器件的发展要求与SiC材料的前景,结合导师国家自然基金项目课题,旨在研发出具有更高性能与使用规模的电力电子器件。本文通过对SiC材料以及静电感应晶体管的理论研究与分析,使用Silvaco Tcad软件对SiC静电感应晶体管的相关工艺进行了模拟仿真,完成了4H-SiC静电感应晶体管的设计,并通过对相关参数的研究完成了所设计的4H-SiC静电感应晶体管的优化。本论文研究的主要工作包括:一、对比了目前半导体材料的性能、工艺和成本等方面的优缺点,分析了适合于作为未来普及的半导体材料,最终选择4H-SiC材料作为研究目标,并将其运用到静电感应晶体管的设计中。二、研究了静电感应晶体管的工作原理,通过Si衬底静电感应晶体管分析了现有的静电感应晶体管器件的分类并选择平面型埋栅结构静电感应晶体管作为研究对象。通过对静电感应晶体管的研究,参考Si衬底静电感应晶体管,简单设置了4H-SiC静电感应晶体管的初始参数。三、通过对4H-SiC材料的研究以及工艺分析,完成了4H-SiC静电感应晶体管设计制造中的相关工艺过程的模拟仿真。包括了定义4H-SiC衬底材料并划分了器件仿真网格,模拟仿真4H-SiC中,离子注入的杂质掺杂分布工艺。通过Silvaco Tcad软件中内嵌的优化工具Optimizer对4H-SiC的退火工艺参数进行了优化。通过材料分析与功能仿真,最终完成了器件的工艺仿真以及初始参数设置。四、通过器件编辑器DevEdit对影响4H-SiC静电感应晶体管的相关参数进行了模拟仿真与理论分析。包括对器件的类五级管工作状态和类三级管工作状态的模拟仿真,对包括沟道相关参数及漂移区相关参数在内的相关参数的模拟仿真和对SiC材料杂质不完全离化模型的仿真。五、根据已经进行的模拟仿真与性能分析,最终得到了优化后的器件模型,并对优化后的模型模拟仿真,提取了器件的性能参数。将设计的4H-SiC静电感应晶体管与项目组完成的Si静电感应晶体管进行了对比,可以明显看出,虽然4H-SiC静电感应晶体管仍处于设计阶段但是其性能要比Si静电感应晶体管有一定的提升。
[Abstract]:In the past 70 years, the semiconductor industry has developed rapidly in the field of circuit design. The more integrated semiconductor chips have promoted the emergence of new generation of electronic products at the speed of doubling the number of devices in 18 months. In contrast, the development of semiconductor materials and semiconductor devices is not satisfactory. At present, the semiconductor materials that occupy the market of semiconductor materials are still the earliest used semiconductors. In the field of semiconductor devices, especially in the field of power electronic devices, Older devices, such as thyristors, are still the mainstream of large-scale commercial production. Sic materials are considered as the most likely new semiconductor materials to replace Si materials in the future, and electrostatic induction transistors are also booming new semiconductor devices. Therefore, the research and development of electrostatic induction transistors on SiC substrate is a promising subject. Based on the development requirements of power electronic devices and the prospect of SiC materials, this thesis aims to develop power electronic devices with higher performance and use scale. Based on the theoretical research and analysis of SiC materials and electrostatic induction transistors, the related processes of SiC electrostatic induction transistors are simulated with Silvaco Tcad software, and the design of 4H-SiC static induction transistors is completed. The 4H-SiC electrostatic induction transistor is optimized by studying the related parameters. The main work of this thesis is as follows: firstly, the advantages and disadvantages of the current semiconductor materials in performance, process and cost are compared, and the suitable semiconductor materials for the future are analyzed. Finally, the 4H-SiC material is chosen as the research goal. It is applied to the design of electrostatic induction transistor. Secondly, the working principle of electrostatic induction transistor is studied. The classification of existing electrostatic induction transistor devices is analyzed by using Si substrate electrostatic induction transistor and plane buried gate electrostatic induction transistor is selected as the research object. By studying the electrostatic induction transistor and referring to the Si substrate electrostatic induction transistor, the initial parameters of the 4H-SiC electrostatic induction transistor are simply set. Thirdly, through the research of 4H-SiC material and process analysis, the simulation of the related process in the design and manufacture of 4H-SiC electrostatic induction transistor is completed. It includes defining the 4H-SiC substrate material and dividing the device simulation grid to simulate the impurity distribution process of ion implantation in 4H-SiC. The annealing process parameters of 4H-SiC were optimized by Optimizer, an optimization tool embedded in Silvaco Tcad software. Through material analysis and function simulation, the process simulation and initial parameter setting of the device are finally completed. Fourthly, the simulation and theoretical analysis of the parameters affecting the 4H-SiC electrostatic induction transistor are carried out by the device editor DevEdit. The simulation includes the simulation of the working state of the device, the simulation of the operation state of the device, the simulation of the related parameters, including the channel correlation parameters and the drift region parameters, and the simulation of the incomplete impurity ionization model of the SiC material. Finally, the optimized device model is obtained according to the simulation and performance analysis, and the performance parameters of the device are extracted from the optimized model simulation. Comparing the designed 4H-SiC electrostatic induction transistor with the Si electrostatic induction transistor completed by the project team, it can be seen that, Although the 4H-SiC electrostatic induction transistor is still in the design stage, its performance is better than that of Si electrostatic induction transistor.
【学位授予单位】：兰州交通大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN32

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