基于CMOS工艺SPAD的单光子探测技术研究

发布时间：2018-05-05 11:40

本文选题：单光子探测 + 雪崩光电二极管　；参考：《重庆大学》2015年硕士论文

【摘要】：光在极其微弱时会离散成一个个的光子,称为单光子。单光子信号由于强度微弱且粒子性显著,常规技术难以对其检测,被认为是光电探测技术的极限。同时单光子信号又是一种普遍存在的信息载体,在日常生活、工业生产、科学研究以及国防军事等各方面都有着广泛应用,因而近年来受到研究人员重视。单光子探测技术主要体现在以下几方面:有极高增益的单光子探测器件,控制单光子探测器件并对信号进行处理的快速电路,器件和电路的集成技术,大规模像元阵列的制作及拼接。目前在单光子探测方面亟待解决的问题有:单光子探测器工艺复杂、工作电压高、价格昂贵、重复性差,外围电路响应速度慢、版图面积大,对单光子探测器和相关电路的混合拼接易导致性能下降、噪声变大。为解决上述问题,本文在中央高校基本业务费资助项目(NO.12120001)支持下,对单光子探测技术进行了研究。文章选用实验室设计的带保护环结构的CMOS工艺兼容的雪崩光电二极管作为单光子探测器件,对雪崩光电二极管的工作原理和相关参数进行了介绍。用等效电路模型代替雪崩光电二极管在软件中进行仿真,分析比较了雪崩光电二极管的三种淬灭模式,选择主动淬灭电路控制雪崩光电二极管,用高速电压比较电路作为雪崩信号甄别电路,设计了数字和模拟结构的计数电路。在此基础上完成了单光子探测像元电路,包括雪崩光电二极管等效电路、淬灭复位电路、雪崩信号甄别电路、光子计数电路等。仿真结果显示电路探测速度可达5ns,淬灭电路死时间约2.690ns,从光子信号进入到计数完成整体电路传输延时约3.0572ns,计数电路在线性模式下的计数容量为55。此外,还对时间相关单光子计数的原理和基本电路结构进行介绍,用高速电压比较电路进行光子到达定时,阐述几种时间数字转化技术,设计了基于S-R锁存器的时间放大电路和基于电流偏置比例的时间放大电路。
[Abstract]:When light is extremely weak, it will be dispersed into one photon, called a single photon. Single photon signal is regarded as the limit of photoelectric detection technology because of its weak intensity and remarkable particle property, which makes it difficult to detect it by conventional technology. At the same time, single photon signal is a common information carrier, which has been widely used in daily life, industrial production, scientific research, national defense and military and so on, so it has been paid attention to by researchers in recent years. The single photon detection technology is mainly embodied in the following aspects: single photon detector with extremely high gain, fast circuit for controlling single photon detector and processing of signal, integrated technology of device and circuit, Fabrication and splicing of large-scale pixel arrays. At present, the problems that need to be solved urgently in the field of single photon detection are: the process of single photon detector is complex, the working voltage is high, the price is expensive, the repeatability is poor, the response speed of peripheral circuit is slow, and the layout area is large. The mixed splicing of single photon detectors and related circuits can lead to the deterioration of performance and the increase of noise. In order to solve the above problems, the single photon detection technology is studied under the support of the project of basic operating expenses of the Central University (no. 12120001). In this paper, an avalanche photodiode with protective ring structure and compatible avalanche photodiode designed in laboratory is used as a single photon detector. The working principle and related parameters of the avalanche photodiode are introduced. Three quenching modes of avalanche photodiodes are analyzed and compared by using equivalent circuit model instead of avalanche photodiodes. The active quenching circuit is chosen to control the avalanche photodiodes. The high speed voltage comparison circuit is used as an avalanche signal discrimination circuit, and the counting circuit of digital and analog structures is designed. On this basis, a single photon detection pixel circuit is completed, including avalanche photodiode equivalent circuit, quenching reset circuit, avalanche signal discrimination circuit, photon counting circuit and so on. The simulation results show that the detection speed of the circuit can reach 5ns, the dead time of quenched circuit is about 2.690ns, the transmission delay of the whole circuit is about 3.0572ns from the photon signal entering into the counting circuit, and the counting capacity of the counting circuit is 55 in linear mode. In addition, the principle and basic circuit structure of time-dependent single-photon counting are introduced, and several time-digital conversion techniques are described by using high-speed voltage comparison circuit to carry out photon arrival timing. A time amplifier circuit based on S-R latch and a time amplifier circuit based on current bias ratio are designed.
【学位授予单位】：重庆大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN409;TN312.7

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