基于PBDT-TT-F∶PCBM体异质结红光探测器的光电特性

发布时间：2018-05-06 01:22

  本文选题：有机光电探测器 + 红光　； 参考：《发光学报》2017年12期

【摘要】：采用旋涂工艺与蒸镀工艺结合的方法制备了PBDT-TT-F∶PCBM体异质结红光探测器,研究了活性层的混合比例和厚度、退火温度等因素对器件光电特性的影响。实验结果表明:活性层PBDT-TT-F∶PCBM的混合质量比为1∶1.5、厚度为150 nm、退火温度为100℃、时间为15 min时制备的器件性能最佳,在波长为650nm、功率为6.6 m W/cm~2的光照下,探测器光电流密度可达到0.85 m A/cm~2,光响应度达到128 m A/W。
[Abstract]:The PBDT-TT-F:PCBM heterojunction red photodetectors were fabricated by the combination of spin-coating and evaporation. The effects of the mixing ratio and thickness of the active layer and annealing temperature on the photoelectric properties of the device were studied. The experimental results show that when the mixing mass ratio of active layer PBDT-TT-F:PCBM is 1: 1.5, the thickness is 150 nm, the annealing temperature is 100 鈩，

本文编号：1850156