TSV封装中互连结构的差分串扰建模研究

发布时间：2018-05-07 06:13

本文选题：TSV封装 + 差分串扰　；参考：《微电子学与计算机》2017年09期

【摘要】：为了研究TSV封装中互连结构之间的串扰对差分信号传输特性的影响;针对硅通孔结构提出了一种改进型的"近邻硅通孔差分串扰"RLCG寄生参数模型,进而提出了一种适用于描述接地硅通孔对近邻硅通孔串扰影响的"接地硅通孔"RLCG寄生参数模型;针对层间互连线结构提出了一种改进型的"近邻平行互连线差分串扰"RLCG寄生参数模型,进而提出了一种"近邻垂直互连线差分串扰"RLCG寄生参数模型.在此基础之上,采用HFSS三维全波仿真方法对硅通孔和层间互连线的各种实际串扰状态进行了三维电磁场建模和分析.将RLCG模型的单端-单端串扰以及单端-差分串扰与HFSS模型的分析结果进行了对比,对比结果证明在0.1~30GHz宽频段内本文提出的上述4种RLCG电路模型能够较为准确的描述TSV封装内互连结构之间的串扰特性.
[Abstract]:In order to study the influence of crosstalk between interconnects on the transmission characteristics of differential signals in TSV packaging, an improved RLCG parasitic parameter model of "differential crosstalk in close neighbor silicon through hole" is proposed for silicon through hole structure. Furthermore, a parasitic parameter model of "grounded silicon through hole" RLCG is proposed, which is suitable for describing the influence of grounded silicon through hole on adjacent silicon through hole crosstalk. In this paper, an improved RLCG parasitic parameter model of "differential crosstalk of adjacent parallel interconnects" and a parasitic parameter model of "differential crosstalk of adjacent vertical interconnection lines" for interlayer interconnection are presented. On the basis of this, the 3D electromagnetic field modeling and analysis of the real crosstalk states of the silicon through hole and interlayer interconnect are carried out by using the HFSS full-wave simulation method. In this paper, the analysis results of RLCG model and HFSS model are compared with those of HFSS model, and the results of single end to single end crosstalk and single end differential crosstalk are compared with those of HFSS model. The comparison results show that the above four RLCG circuit models in the 0.1~30GHz broadband band can accurately describe the crosstalk characteristics between the interconnect structures in the TSV package.
【作者单位】：中国科学院微电子研究所;
【基金】：国家自然科学基金项目(61306135)
【分类号】：TN405.97

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