GCT动态雪崩失效机理的研究

发布时间：2018-05-08 08:22

本文选题：门极换流晶闸管 + 动态雪崩　；参考：《固体电子学研究与进展》2017年02期

【摘要】：门极换流晶闸管(GCT)关断过程中的动态雪崩效应是导致其失效的关键因素。本文采用Sentaurus仿真软件对4 500V非对称GCT关断过程中的动态雪崩效应进行了研究,建立了用于描述动态雪崩过程中等离子体边缘移动速度的二维解析模型,分析了电流丝产生的原因及其影响因素,研究了GCT的失效机理。结果表明,GCT发生动态雪崩时会产生单个纵向贯穿整个器件的电流丝,这是由p阳极区的空穴注入所致,并且空穴注入会减慢电流丝的移动速度,从而降低了GCT关断的可靠性。
[Abstract]:The dynamic avalanche effect of gate commutation thyristor (GCT) is the key factor leading to its failure. In this paper, the dynamic avalanche effect during 4 500 V asymmetric GCT turn-off is studied by using Sentaurus simulation software, and a two-dimensional analytical model is established to describe the plasma edge moving velocity during dynamic avalanche. The causes and influencing factors of current wire are analyzed, and the failure mechanism of GCT is studied. The results show that when dynamic avalanche occurs, a single longitudinal current wire is produced through the whole device, which is caused by hole injection in the p anode region, and the hole injection will slow down the moving speed of the current wire, thus reducing the reliability of GCT turn-off.
【作者单位】：西安理工大学自动化与信息工程学院;
【基金】：国家自然科学基金资助项目(51477137,51077110) 陕西省工业攻关资助项目(2014K06-21)
【分类号】：TN34

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