铒离子注入氮化镓的光学活性与缺陷掺杂变化

发布时间：2018-05-11 13:18

  本文选题：材料改性 + 氮化镓　； 参考：《北京师范大学学报(自然科学版)》2017年05期

【摘要】：对100keV、1×1015cm-2的Er离子注入的GaN退火样品的各项性质进行研究,采取光致发光(室温)、拉曼光谱和卢瑟福背散射对不同的退火样品的微观结构和光学性质进行研究.在退火样品中,均观测到了在1 539nm附近的PL峰.随着退火温度的升高,PL峰强在900℃时达到最大值.RBS结果显示随着温度的升高,Er离子不断扩散,且有部分在表面析出,导致在光学活性位置上的Er离子减少,使PL强度在更高温度下减弱.
[Abstract]:The properties of GaN annealed samples implanted with er ions of 100 Kev 1 脳 1015cm-2 were studied. The microstructure and optical properties of different annealed samples were studied by photoluminescence (room temperature, Raman and Rutherford backscattering). The PL peaks near 1 539nm were observed in the annealed samples. With the increase of annealing temperature, the peak intensity of PL reached the maximum value at 900 鈩，

本文编号：1874114