图形化Silicon-on-Insulator衬底上分子束外延生长可动GaN微光栅的研究

发布时间：2018-05-11 13:53

本文选题：分子束外延 + GaN　；参考：《光谱学与光谱分析》2017年06期

【摘要】：GaN材料作为第三代半导体材料,具有宽禁带、直接带隙、耐腐蚀等优点,是一种非常有前景的MOEMS材料。由于GaN的刻蚀目前尚未成熟,因此图形化外延生长法是一种较好的选择。本文基于SOI(silicon-on-insulator)基片,利用硅的微加工技术和图形化GaN分子束外延生长工艺,设计并加工了工作在太赫兹波段的、可以在二维方向上运动的SOI基GaN光栅。光栅周期为16μm,光栅宽度为6μm,峰值位置为25.901μm。通过仿真优化,设计的微驱动器在水平电压220V时,水平方向上的位移为±7.26μm;垂直方向加200V电压时,垂直位移2.5μm。为了研究在图形化SOI衬底上外延生长的InGaN/GaN量子阱薄膜的光学性能,用激光拉曼光谱仪对薄膜进行了光致发光光谱实验。实验结果表明,InGaN/GaN量子阱薄膜具有良好的发光性能,其发光范围为350~500nm,覆盖了紫外光到黄绿光。由于局域态效应与禁带收缩的作用,随着环境温度由10K升高至室温,薄膜的PL光谱的峰位呈现"S"形变化趋势。
[Abstract]:As the third generation semiconductor material, GaN material has the advantages of wide band gap, direct band gap, corrosion resistance and so on. It is a promising MOEMS material. Because the etching of GaN is not mature at present, graphical epitaxial growth method is a better choice. Based on SOI silicon-on-insulator substrate, SOI based GaN gratings working in terahertz band and moving in two-dimensional direction are designed and fabricated by using silicon microfabrication technology and graphical GaN molecular beam epitaxial growth process. The grating period is 16 渭 m, the grating width is 6 渭 m, and the peak position is 25.901 渭 m. By simulation and optimization, the displacement of the designed microactuator is 卤7.26 渭 m at 220 V horizontal voltage and 2.5 渭 m at 200 V voltage in vertical direction. In order to study the optical properties of InGaN/GaN quantum well films epitaxially grown on graphical SOI substrates, the photoluminescence spectra of the films were investigated by laser Raman spectroscopy. The experimental results show that InGaN / gan quantum well thin films have good luminescence properties, and their luminescence ranges from 350 nm to 500 nm, covering from UV to yellowish green light. Due to the effect of local state effect and band gap contraction, with the increase of ambient temperature from 10 K to room temperature, the peak position of PL spectra of the films shows a "S" shape change trend.
【作者单位】：南京邮电大学光电工程学院;Department
【基金】：国家自然科学基金项目(61274121,61574080) 江苏省自然科学基金项目(BK2012829) 南京邮电大学人才引进项目(NY212007)资助
【分类号】：TN304.054

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