宽禁带功率半导体器件损耗研究

发布时间：2018-05-11 15:30

本文选题：SiC + MOSFET　；参考：《浙江大学》2016年硕士论文

【摘要】：与传统硅(Si)功率器件相比,宽禁带功率半导体器件有很多出色的性能,其中碳化硅(SiC)和氮化镓(GaN)功率器件应用越来越广泛,有可能在未来全面替代Si功率器件而成为下一代功率半导体器件。目前对宽禁带功率半导体器件性能的研究还不够完善,不同器件制造商所提供器件手册的测试条件各异,一些器件特性数据未提供,无法在相同测试条件下对GaN、SiC、Si三种材料的功率器件进行特性分析和比较。宽禁带功率半导体器件应用中最大的挑战是高速开关下寄生参数对器件特性的影响更加显著,为了分析寄生参数对开关特性的影响需要建立宽禁带半导体器件解析模型,而目前高耐压GaN功率晶体管中采用的共栅共源结构解析模型研究还很不成熟。本文从器件损耗的角度,在不同条件下对SiC MOSFET、GaN功率晶体管及Si功率器件做详细的测试、比较和分析。文中首先测试了不同驱动电压、驱动电阻、电流、温度下SiC MOSFET、GaN功率晶体管及Si功率器件的导通特性和开关特性,并进行导通损耗和开关损耗计算,对宽禁带功率半导体器件损耗随着驱动电压、驱动电阻、电流、温度的变化规律进行了分析。然后在逆变器应用中对不同器件工作状态进行分析进而对器件整体损耗进行仿真计算及实验。此外,GaN功率晶体管存在反并二极管关断时的电压尖刺过高,阈值电压低且驱动回路易受干扰的问题,本文给出了应用中的注意事项。最后,本文针对共栅共源结构GaN功率晶体管进行开关过程分析及建模,考虑了共栅共源结构中PCB和引线寄生电感以及器件结电容,计算得出共栅共源结构GaN功率器件开关过程中电压电流时域表达式,得到开关过程波形及损耗,模型与实验结果较吻合。
[Abstract]:Compared with traditional Si Si) power devices, wide band gap power semiconductor devices have many excellent performances, among which silicon carbide (sic) and gallium nitride (gan) power devices are more and more widely used. It is possible to replace Si power devices as the next generation power semiconductor devices in the future. At present, the research on the performance of wide-band gap power semiconductor devices is not perfect. The testing conditions of device manuals provided by different device manufacturers are different, and some device characteristic data are not provided. It is impossible to analyze and compare the characteristics of three kinds of power devices of gan Si Si under the same test conditions. The biggest challenge in the application of wide-band gap power semiconductor devices is that the parasitic parameters have more significant influence on the characteristics of the devices under high-speed switching. In order to analyze the effects of parasitic parameters on the switching characteristics, an analytical model of wide-band gap semiconductor devices is needed. However, the analytical model of the common gate source structure used in high voltage GaN power transistors is still immature. In this paper, SiC MOSFET gan power transistors and Si power devices are tested, compared and analyzed under different conditions from the point of view of device loss. In this paper, the on-on and switching characteristics of SiC MOSFETGaN power transistors and Si power devices at different driving voltage, drive resistance, current and temperature are tested, and the on-loss and switching losses are calculated. The variation of the loss of wide-band gap power semiconductor devices with driving voltage, drive resistance, current and temperature is analyzed. Then, in the application of inverter, the working states of different devices are analyzed, and the overall loss of the device is simulated and tested. In addition, GaN power transistors have the problems of high voltage spike, low threshold voltage and easy interference in driving circuit when the diode is turned off. Some points for attention in application are given in this paper. Finally, the switching process analysis and modeling of the GaN power transistor with the common gate source structure are carried out. The parasitic inductance of PCB and lead and the junction capacitance of the device are considered. The time domain expressions of voltage and current in the switching process of the GaN power device with a common gate source structure are obtained, and the waveform and loss of the switch process are obtained. The model is in good agreement with the experimental results.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN303

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