同质集成可见光互联芯片（英文）

发布时间：2018-05-13 04:01

  本文选题：同质集成 + 量子阱二极管　； 参考：《Frontiers of Information Technology & Electronic Engineering》2017年09期

【摘要】：本文采用晶圆级微纳加工技术,基于硅衬底氮化镓晶圆,提出并制备了同质集成发射极、集电极和基极的可见光互联芯片。利用In Ga N/Ga N量子阱二极管器件发光探测共存的特性,芯片的发射极和集电极采用相同的量子阱结构,并通过相同的制备工艺实现。发射极和集电极之间通过悬空的光波导连接,实现器件之间的光互联。同质集成可见光互联芯片集成两个共基极的光致晶体管,实现芯片内可见光的发射、传输和探测功能。该可见光互联芯片可以广泛应用于光致类脑神经形态芯片、芯片内可见光通信、智能显示、微纳成像及光传感等领域。
[Abstract]:Based on silicon substrate gallium nitride wafer, a visible light interconnection chip with homogeneous integrated emitter, collector and base electrode is proposed and fabricated by wafer-level micro-nano fabrication technology in this paper. In Ga N/Ga N quantum well diodes are used to detect coexistence. Emitter and collector adopt the same quantum well structure and are realized by the same fabrication process. Optical interconnection between emitter and collector is realized by suspended optical waveguide. The homogeneous integrated visible light interconnection chip integrates two common base phototransistors to realize the functions of transmitting, transmitting and detecting visible light in the chip. The visible-light interconnection chip can be widely used in the field of photo-induced neuron-like chips, visible light communication, intelligent display, micro-nano imaging and optical sensing.
【作者单位】： Peter
【基金】：Project supported by the Special Project for Inter-government Collaboration of State Key Research and Development Program,China(No.2016YFE0118400) the Natural Science Foundation of Jiangsu Province,China(No.BE2016186) the National Natural Science Foundation of China(Nos.61322112 and 61531166004) the Research Project(Nos.KYZZ16_0258,CJKA201506,and CKJA201306) the ‘111’ Project
【分类号】：TN491
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本文编号：1881548