碲锌镉晶体化学机械抛光液的研究

发布时间：2018-05-15 04:16

本文选题：化学机械抛光 + CZT晶体　；参考：《红外技术》2017年01期

【摘要】：本文以硅溶胶为磨料颗粒、次氯酸钠(NaClO)为氧化剂制备适用于CZT晶片的化学机械抛光液。采用XPS能谱分析CZT表面元素化学态,研究CZT化学机械抛光过程中抛光液的化学作用机理,使用激光干涉仪、原子力显微镜研究抛光液中NaClO含量对晶片抛光速率、晶片表面PV值及表面粗糙度Ra的影响。结果表明,硅溶胶-次氯酸钠抛光液通过与CZT晶体中Te单质或CdTe发生化学反应,生成TeO_2。随后在一定压力下,抛光盘与CZT晶片发生相对运动,并在硅溶胶磨料颗粒的辅助作用下去除反应物。当NaClO含量在2%~10%时,随着NaClO含量的增加,晶片表面PV值和粗糙度Ra值先降低后升高,去除速率则随着NaClO含量的增加而增加。NaClO含量为6%时,PV值和Ra值最低,得到的晶片表面质量最好。
[Abstract]:In this paper, a chemical-mechanical polishing solution suitable for CZT wafer was prepared by using silica sol as abrasive particle and sodium hypochlorite (NaClO) as oxidant. The chemical states of elements on the surface of CZT were analyzed by XPS spectroscopy. The chemical mechanism of polishing solution in the process of CZT chemical-mechanical polishing was studied. The effect of NaClO content in the polishing solution on the polishing rate of wafer was studied by laser interferometer and atomic force microscope. The effect of surface PV value and surface roughness Ra on wafer surface. The results show that the silica sol-sodium hypochlorite polishing solution reacts with Te or CdTe in CZT crystal to form Teo _ s _ 2. Then under a certain pressure, the disk and the CZT wafer moved relatively, and the reactants were removed by the assistance of silica sol abrasive particles. When the NaClO content ranged from 2 to 10, with the increase of NaClO content, the PV value and roughness Ra value of wafer surface decreased first and then increased, and the removal rate increased with the increase of NaClO content. The surface quality of the obtained wafer is the best.
【作者单位】：上海大学材料科学与工程学院;中国科学院红外成像材料与器件重点实验室;
【基金】：红外成像与器件重点实验室开放基金项目
【分类号】：TN305.2

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