金属氧化物薄膜的低温溶液法制备及其在薄膜晶体管中的应用

发布时间：2018-05-17 14:16

本文选题：薄膜晶体管 + 金属氧化物　；参考：《青岛大学》2017年硕士论文

【摘要】：在过去的是十几年里,以金属氧化物半导体为基的薄膜晶体管凭借其优异的电学性质、大面积制备的均匀性以及良好的光学透过率已经成为平板显示器的核心器件。目前,一些利用氧化物薄膜晶体管驱动的显示器原型设备已经出现。随着市场急需的成本效益及大面积电子器件集成要求,溶液法制备工艺凭借其简单、低成本、大面积均匀性和可空气环境加工等优点成为了有力的竞争者。该论文将集中研究并讨论利用溶液法制备金属氧化物半导体/绝缘体及其在薄膜晶体管(Thin-film transistor,TFT)中的应用等问题。主要的研究内容分为以下三部分:第一章:我们利用溶胶凝胶技术制备了具有高介电常数(高k)的Zr O_2介电薄膜材料。利用紫外光(UV)化学处理在低温下(150 oC)分解前驱体薄膜中的杂质,实现具有低漏电流、高电容密度的高k薄膜。基于ZrO_2作为栅绝缘层,我们研究了不同退火温度对In_2O_3 TFT器件电学性质的影响。结果表明优化的In_2O_3/ZrO_2TFT在极低的操作电压(1.5 V)下表现高的场效应迁移率和大的电流开关比。这对低功耗、便携式、可利用电池驱动的设备研发具有重要科学意义。第二章:研究了利用水溶胶技术制备低压、高性能TFT器件。采用金属硝酸盐和去离子水制备水溶胶前驱体溶液。相比于传统有机系溶液配制方法,水溶胶技术具有低温、环保等优点。我们利用该方法制备了InZnO半导体和Y2O3高k介电薄膜。研究了不同退火温度及退火时间对器件电学性质的影响。结果表明采用水溶胶制备的TFT器件在低温下通过延长退火时间可以实现高温退火的电学性质。第三章:研究了利用溶液法制备p型金属氧化物TFT的电学性能。通过调研文献我们发现目前金属氧化物半导体的研究都集中于n型材料,这对于p-n结和互补金属氧化物半导体(CMOS)电路的研发极为不利。利用醋酸镍,乙醇胺和无水乙醇作为前驱体,我们研究了不同退火温度对NiO薄膜理化性质的影响。在250 oC退火温度下,我们制备了具有良好表面形貌、透明非晶的p型NiO半导体薄膜。在该条件下制备得到的TFT器件迁移率为0.07 cm2/Vs,器件开关比达到4×104。
[Abstract]:In the past decade, thin film transistors based on metal oxide semiconductors have become the core devices of flat panel displays due to their excellent electrical properties, large area homogeneity and good optical transmittance. At present, some display prototype devices driven by oxide thin film transistors have emerged. With the urgent market cost-benefit and large-area electronic device integration requirements, the solution preparation process has become a strong competitor with its advantages of simplicity, low cost, large area uniformity and air-environment processing This paper will focus on the preparation of metal oxide semiconductors / insulators by solution method and its application in Thin-film transistors TFTs. The main research contents are as follows: chapter 1: we prepared Zr O _ 2 dielectric thin films with high dielectric constant (k) by sol-gel technique. The high k thin films with low leakage current and high capacitance density were realized by UV UV chemical treatment at low temperature (150 OC) to decompose the impurities in the precursor films. Based on ZrO_2 as gate insulator, we studied the effect of annealing temperature on electrical properties of In_2O_3 TFT devices. The results show that the optimized In_2O_3/ZrO_2TFT exhibits high field effect mobility and high current-switching ratio at extremely low operating voltage of 1.5 V. This is of great scientific significance to the research and development of low power, portable and battery-driven devices. Chapter 2: the preparation of low-pressure and high-performance TFT devices by hydrosol technology is studied. The precursor solution of hydrosol was prepared by metal nitrate and deionized water. Compared with the traditional organic solution preparation method, the hydrosol technology has the advantages of low temperature and environmental protection. InZnO semiconductor and Y2O3 high k dielectric thin films were prepared by this method. The effects of annealing temperature and annealing time on the electrical properties of the device are studied. The results show that the electrical properties of high temperature annealing can be realized by prolonging annealing time at low temperature for TFT devices prepared by hydrosol. Chapter 3: the electrical properties of p-type metal oxide TFT prepared by solution method are studied. It is found that the research of metal oxide semiconductors is focused on n-type materials, which is unfavorable to the research and development of p-n junction and complementary metal oxide semiconductor (CMOS) circuits. Using nickel acetate, ethanolamine and anhydrous ethanol as precursors, we studied the effects of annealing temperature on the physical and chemical properties of NiO films. P-type NiO semiconductor films with good surface morphology and transparent amorphous structure were prepared at 250oC annealing temperature. Under this condition, the mobility of TFT device is 0.07 cm ~ 2 / V _ s, and the switch ratio is 4 脳 10 ~ 4.
【学位授予单位】：青岛大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN321.5

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