新型π-共轭聚合物的合成及场效应晶体管性能研究

发布时间：2018-05-19 08:57

本文选题：聚合物半导体 + 高迁移率　；参考：《湘潭大学》2017年硕士论文

【摘要】：设计合成新型的聚合物构建单元是开发综合性能优异、高迁移率聚合物半导体材料的关键所在。本论文基于新型四噻吩并蒽衍生物给体单元(TTB-2Br),设计并合成了三种聚合物半导体材料,并研究了三种聚合物半导体材料的场效应晶体管性能。此外,基于新型梯形并杂环类电子型受体构建单元(IDTO-2Br和IDTCN-2Br),设计并合成了四种聚合物半导体材料,初步研究了四种材料的结构与性能的关系。具体研究内容如下:1)运用二维π拓展策略,开发了一类长烷基支链取代四噻吩并蒽类聚合物半导体构建单元(TTB-2Br),并设计合成了三种结构新颖的TTB基聚合物半导体材料(PTTB-2T,PTTB-TT和PTTB-BZ)。结果表明:三种TTB基聚合物都具有很好的热力学稳定性,良好的溶解性、较低的HOMO能级值,良好的共平面性及紧密的π-π堆积距离;相对于全给体型聚合物PTTB-2T和PTTB-TT,给-受体型聚合物PTTB-BZ薄膜展现出更紧密的π-π堆积、更有序的纤维结晶相结构和更大的结晶谷粒。因而,PTTB-BZ获得更高的空穴传输性能,其最高空穴迁移率达0.15cm~2V~(-1)s~(-1)。2)通过对引达省并二噻吩母核的分子结构进行衍生和修饰,设计并合成了2-癸基-十四烷基取代的受体型构建单元IDTO-Br和IDTCN-2Br。通过与给体单元(联二噻吩和乙烯双键)共聚,成功合成出了四种结构新颖的D-A型聚合物半导体材料(PIDTO-V,PIDTO-2T,PIDTCN-V和PIDTCN-2T)。四种聚合物均表现出良好的溶解性、良好的热力学稳定性和较高的数均分子量。吸收光谱测试结果表明:PIDTO-V和PIDTO-2T的光学带隙分别窄至1.27和1.30 eV。电化学测试表明:强缺电性羰基和二氰基乙烯基团的引入,使得四种聚合物均表现出较低的HOMO/LUMO能级。而且,含二氰基乙烯取代的聚合物PIDTCN-V和PIDTCN-2T的LUMO能级值都低于 4.2 eV以下,如此低的LUMO能级值有利于制备出空气稳定的电子传输型有机场效应晶体管。这些研究数据展现出了这四种D-A型聚合物半导体材料在高性能有机场效应晶体管的应用潜力。
[Abstract]:The design and synthesis of novel polymer building units is the key to the development of polymer semiconductor materials with excellent comprehensive properties and high mobility. In this paper, three kinds of polymer semiconductor materials are designed and synthesized based on a novel tetrathiophene anthracene derivative donor unit TTB-2Br-O, and the field effect transistor properties of three kinds of polymer semiconductor materials are studied. In addition, four kinds of polymer semiconductor materials were designed and synthesized based on the new trapezoid heterocyclic electron receptor construction units, IDTO-2Br and IDTCN-2Br-0.The relationship between the structure and properties of the four materials was preliminarily studied. The specific research contents are as follows: (1) by using the two-dimensional 蟺 expansion strategy, a class of long alkyl branched tetrathiophene anthracene polymer semiconductor building units, TTB-2BrN, have been developed, and three novel TTB based polymer semiconductor materials, PTTB-2TnPTTB-TT and PTTB-BZN, have been designed and synthesized. The results show that all three kinds of TTB based polymers have good thermodynamic stability, good solubility, low HOMO energy level, good coplanar property and close 蟺-蟺 packing distance. Compared with PTTB-2T and PTTB-TTT, the PTTB-BZ films exhibit more compact 蟺-蟺 stacking, more ordered crystalline phase structure and larger crystalline grains. Therefore, PTTB-BZ has higher hole transport performance. The highest hole mobility of PTTB-BZ is up to 0.15 cm ~ (2) V ~ (+) ~ (1) ~ (1) ~ (2) ~ (2). By the derivation and modification of the molecular structure of dithiophene mother nucleus, 2-decyl-tetradecyl substituted IDTO-Br and IDTCN-2Brare have been designed and synthesized. By copolymerization with donor units (dithiophene and ethylene double bonds), four novel D-A polymer semiconductor materials, PIDTO-V, PIDTO-2T, PIDTCN-V and PIDTCN-2TN, were successfully synthesized. The four polymers showed good solubility, good thermodynamic stability and high molecular weight. The results of absorption spectra show that the optical band gap of PIDTO-V and PIDTO-2T is narrow to 1.27 and 1.30 EV, respectively. Electrochemical measurements show that the introduction of strongly electrically deficient carbonyl and dicyano-vinyl groups makes the four polymers exhibit lower HOMO/LUMO energy levels. Moreover, the LUMO energy levels of PIDTCN-V and PIDTCN-2T are lower than 4.2eV, so a low LUMO energy level can be used to produce air-stable electron-transfer field-effect transistors. These data demonstrate the potential of these four kinds of polymer semiconductor materials in high performance field effect transistors.
【学位授予单位】：湘潭大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386;O633.5;TN304

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