IGCT驱动关断电路及续流回路参数提取

发布时间：2018-05-20 00:08

本文选题：集成门极换流晶闸管 + 门极驱动关断电路　；参考：《中国电机工程学报》2017年18期

【摘要】：集成门极换流晶闸管(integrated gate commutated thyristor,IGCT)关断暂态时,其电流迅速由阴极换向到门极,且IGCT反并联二极管因承受正向偏压而导通,故IGCT关断暂态特性受其门极驱动关断电路及其反并联二极管运行特性影响。基于IGCT关断暂态换流机制及反并联二极管的工作原理,提出IGCT关断暂态时门极换流晶闸管(gate commutated thyristor,GCT)、驱动电路与反并联二极管所构成续流回路的等效电路,详细分析反并联二极管不同工况时等效电路结构及其运行特性的变化。结合IGCT关断暂态其端电压及等效电路各支路电流的实验结果,给出IGCT驱动关断电路及续流回路参数的提取方法。通过不同箝位电压与关断电流时实验结果与理论分析的对比,并考虑参数提取结果的一致性,充分证明等效电路与理论分析的正确性及参数提取方法的有效性。
[Abstract]:When the integrated gate commutated thyristor turn-off transient, the current rapidly commutates from the cathode to the gate, and the IGCT reverse parallel diode is switched on because of the forward bias voltage. Therefore, the transient characteristics of IGCT turn-off are affected by its gate drive turn-off circuit and its operation characteristics of anti-parallel diodes. Based on the transient commutation mechanism of IGCT turn-off and the working principle of anti-parallel diodes, the equivalent circuit of the gate commutating thyristor commutated thyristor GCTT, which is composed of the drive circuit and the anti-parallel diode, is put forward when the IGCT turn-off transient is switched off. The structure of the equivalent circuit and its operating characteristics under different operating conditions are analyzed in detail. Based on the experimental results of the terminal voltage and the branch current of the IGCT turn-off transient circuit, the method of extracting the parameters of the IGCT drive turn-off circuit and the continuous current circuit is presented. By comparing the experimental results with theoretical analysis under different clamping voltages and turn-off currents, and considering the consistency of parameter extraction results, the correctness of the equivalent circuit and the theoretical analysis and the validity of the parameter extraction method are fully proved.
【作者单位】：中国科学院电工研究所;
【分类号】：TM46;TN34

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