锑化镓单晶生长工艺研究

发布时间：2018-05-20 00:01

  本文选题：锑化镓 + 晶体　； 参考：《天津大学》2015年硕士论文

【摘要】：GaSb是直接带隙半导体材料,禁带宽度为0.725eV,晶格常数为0.60959nm。GaSb可以与各种三元、四元的III-V族化合物半导体材料的晶格常数相匹配,因此由晶格失配导致的应力、缺陷等问题大大减少。GaSb已经成为制备长波LED及光电探测器、光纤通信器件的重要衬底材料。目前制备GaSb单晶通常使用直拉法。该方法的优点是可以观察晶体在各个环节的生长状态,及时调整生长参数,缺点是GaSb熔体表面极易氧化而产生浮渣,妨碍引晶和单晶生长过程,且生长过程中可能引入较多微缺陷。本文采用液态覆盖剂封闭熔体直拉法,开展GaSb单晶材料生长工艺研究。研究GaSb晶体生长的基本理论,分析可能出现的异常现象,为实验设计与工艺改进提供理论依据。根据GaSb熔体的物理特性选取合适的液封剂,避免GaSb熔体表面发生氧化反应。建立GaSb单晶生长计算机仿真模拟模型,设计加热器与保温层结构,获得有利于GaSb单晶稳定生长的热场。全面优化引晶、放肩、收肩、等径、收尾等阶段的晶体生长工艺,改进热处理、切割、研磨、抛光等晶体加工工艺,成功制备出2英寸的GaSb单晶片。分析GaSb单晶生长缺陷的影响因素、类型与形成机理,通过优化热场设计,采取小角度放肩生长工艺,控制固液交界面的形貌,调整GaSb多晶料的化学计量比,去除单晶炉内与GaSb多晶料中的杂质等方式,有效减少GaSb单晶中的微缺陷。
[Abstract]:GaSb is a direct band-gap semiconductor material with a bandgap width of 0.725eV, and lattice constant of 0.60959nm.GaSb can match the lattice constants of various ternary, quaternary III-V compound semiconductors, thus resulting in the stress caused by lattice mismatch. Defects and other problems have been greatly reduced. GASB has become an important substrate material for the fabrication of long wave LED, photodetectors and optical fiber communication devices. At present, Czochralski method is usually used to prepare GaSb single crystals. The advantage of this method is that it can observe the growth state of crystal in every link and adjust the growth parameters in time. The drawback is that the surface of GaSb melt is easily oxidized and resulting in dross, which hinders the process of crystal induction and single crystal growth. And more microdefects may be introduced into the growth process. In this paper, the growth process of GaSb single crystal material was studied by using liquid covering agent closed melt Czochralski method. The basic theory of GaSb crystal growth is studied, and the possible abnormal phenomena are analyzed, which provides theoretical basis for experimental design and technological improvement. According to the physical properties of GaSb melt, the proper liquid sealing agent was selected to avoid the oxidation reaction on the surface of GaSb melt. The computer simulation model of GaSb single crystal growth is established and the structure of heater and insulation layer is designed. The thermal field is obtained which is favorable to the stable growth of GaSb single crystal. The crystal growth process in the stages of crystal induction, shoulder setting, shoulder closing, equal-diameter and finishing was optimized, and the crystal processing technology such as heat treatment, cutting, grinding and polishing was improved, and a 2-inch GaSb single crystal wafer was successfully prepared. The influencing factors, types and formation mechanism of GaSb single crystal growth defects were analyzed. By optimizing the thermal field design, adopting the small angle shoulder placement growth process, the morphology of the solid-liquid interface was controlled, and the stoichiometric ratio of the GaSb polycrystalline material was adjusted. In order to reduce the microdefects in GaSb single crystal effectively, the impurity in single crystal furnace and GaSb polycrystalline material are removed.
【学位授予单位】：天津大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.2;O78

【参考文献】

相关期刊论文 前4条

1 黄卉;陈福亮;姜艳;容会;朵云峰;杨志鸿;;我国钼资源现状及钼的冶炼分析[J];云南冶金;2014年02期

2 邓志杰,郑安生,屠海令,武希康;MLEC锑化镓单晶性能研究[J];稀有金属;1996年06期

3 汪鼎国;用水平布里兹曼法生长GaSb单晶[J];稀有金属;1995年01期

4 吴光恒,黄锡珉,富淑清,马凯,景玉梅,宣丽,张传萍;水平法低位错GaSb单晶生长[J];人工晶体学报;1991年01期

相关硕士学位论文 前4条

1 陈德伟;基于有限元法的单晶炉热场数值模拟研究[D];西安理工大学;2009年

2 李晓茸;单晶炉晶体提拉系统平衡研究[D];西安理工大学;2009年

3 周春锋;LEC砷化镓单晶生长技术[D];天津大学;2009年

4 刘红艳;热处理对大直径LEC SI-GaAs中缺陷及电性能的影响[D];河北工业大学;2008年

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