超薄太阳能级硅片切割技术研究

发布时间：2018-05-21 07:58

本文选题：光伏 + 硅片切割　；参考：《苏州大学》2015年硕士论文

【摘要】：太阳能是世界上最普遍、最安全便宜与清洁的能源,光伏发电是利用太阳能最重要的一种方式之一。光伏产业链从上游到下游包括硅料、铸锭(拉棒)、切片、电池片、电池组件、应用系统等6个环节。太阳能级硅片切割是光伏电池制造工艺中的关键环节,将硅片厚度进一步降低,对降低光伏中游阶段的生产成本具有明显的经济效益。由于硅材料属于硬脆材料,在加工的过程中容易产生碎裂,如何在进一步降低硅片厚度的同时保证硅片的质量,是目前存在的一大难题。针对切割厚度为170~190μm的太阳能级硅片进行研究,是本文的主要内容与方向。本文主要研究了多线切割硅片过程中粘胶、切片、脱胶清洗、质量分选等环节的工艺参数的优化,辅助工序砂浆在线回收原理与工艺介绍、主辅料的技术指标与搭配实验,最后对多线切割过程中出现的重大异常进行原因分析与对策研究,具体内容如下:(1)研究了超薄太阳能级多晶硅片切割设备的组成与工作原理,系统性的分析了MB271设备的主要组成部分,设备构件的工作特征与工作条件,介绍了超薄太阳能级多晶硅片生产流程。通过流程说明:必须通过一套完整的工艺流程,来确保切割后硅片的表面质量,同时还要保证一定的生产效率,兼顾生产经济利益最大化。(2)研究了超薄太阳能级多晶硅片在多线切割过程中的机理,确保在切割的过程中实现塑性切削,减少硅片表面出现异常情况。通过对切割机理与模态分析的研究,确定了多线切割线主要的影响因素,为加工参数的确定提供理论依据。(3)针对超薄太阳能级硅片切割过程中的主要影响因素,进行了针对性的研究分析与实验,包括针对导轮的关键参数进行分析与实验研究、砂浆流量与温度指标对硅片质量的影响分析与实验、钢线相关因素影响与实验、砂浆在线回收关键指标进行分析研究。(4)为了更好的解决切割过程中的关键异常情况,本文还针对超薄太阳能级多晶硅片切割过程中的断线与线痕、TTV异常进行了研究分析。通过切割超薄太阳能级硅片的关键因素分析与实验,总结出影响硅片质量与合格率的关键因素(导轮、砂浆、碳化硅、钢线、工件速度),分析了此部分指标的影响因素,初步结论如下:(1)与现有硅片厚度相比,本文切割的硅片厚度由210μm降低到180μm左右,节省了15%左右的硅原料。(2)与现有技术相比,本文提出了影响太阳能级硅片切割的影响物理因素指标,如碳化硅的粒径、PEG的粘度、导轮的指标、钢线的走线速度规范化等。(3)通过本文的研究,能够降低硅片的厚度,同时将技术工艺条件规范化,减少生产中异常的发生。
[Abstract]:Solar energy is the most common, safe, cheap and clean energy in the world. Photovoltaic power generation is one of the most important ways to use solar energy. The photovoltaic industry chain from upstream to downstream includes six links: silicon material, ingot (drawing rod, chip, battery module, application system, etc.) Solar wafer cutting is a key link in the manufacturing process of photovoltaic cells. Reducing the thickness of silicon wafers further has obvious economic benefits to reduce the production cost in the middle reaches of photovoltaic cells. As silicon is a hard and brittle material, it is easy to break down in the process of processing. How to further reduce the thickness of silicon wafer while ensuring the quality of silicon wafer is a major problem at present. It is the main content and direction of this paper to study the solar silicon wafer with a thickness of 170 ~ 190 渭 m. This paper mainly studies the optimization of technological parameters of viscose, slicing, degumming cleaning, quality sorting and so on in the process of multi-wire cutting silicon wafer, the principle and process introduction of on-line recovery of mortar in auxiliary working procedure, the technical index and matching experiment of main and auxiliary materials. Finally, the causes and countermeasures of the major anomalies in the process of multi-wire cutting are analyzed and studied. The specific contents are as follows: (1) the composition and working principle of the ultra-thin solar polysilicon wafer cutting equipment are studied. This paper systematically analyzes the main components of MB271 equipment, the working characteristics and working conditions of the equipment components, and introduces the production process of ultra-thin solar polysilicon wafers. Through the process description: must pass a complete set of technological processes to ensure the surface quality of the cut silicon wafer, but also to ensure a certain production efficiency, The mechanism of ultra-thin solar polysilicon wafer in the process of multi-wire cutting is studied in order to ensure plastic cutting in the process of cutting and to reduce the abnormal situation on the surface of silicon wafer. Through the study of cutting mechanism and modal analysis, the main influencing factors of multi-wire cutting line are determined, which provide theoretical basis for the determination of machining parameters, and aim at the main influencing factors in the cutting process of ultra-thin solar wafer. The relevant research and experiments are carried out, including the analysis and experiment on the key parameters of the guide wheel, the influence of mortar flow and temperature on the quality of silicon wafer, and the influence and experiment of the related factors of steel wire on the quality of silicon wafer. In order to better solve the key abnormal situation in cutting process, this paper also studies and analyzes the breakline and line trace TTV anomaly during the cutting process of ultra-thin solar polysilicon wafer. Through the analysis and experiment of the key factors of cutting ultra-thin solar wafer, the key factors (guide wheel, mortar, silicon carbide, steel wire, workpiece speed and so on) affecting the quality and qualified rate of silicon wafer are summarized, and the influencing factors of this index are analyzed. The preliminary conclusion is as follows: (1) compared with the existing silicon wafer thickness, the thickness of silicon cut in this paper is reduced from 210 渭 m to 180 渭 m, saving about 15% silicon raw material. In this paper, the physical factors affecting the cutting of solar wafer, such as the viscosity of silicon carbide particle size and PEG, the index of guide wheel, the standardization of steel wire speed and so on, are put forward. The thickness of silicon wafer can be reduced by the research in this paper. At the same time, the technical process conditions will be standardized to reduce the occurrence of abnormal production.
【学位授予单位】：苏州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.12

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