用于固态调制器的IGBT串并联电路研究

发布时间：2018-05-21 16:31

本文选题：高压功率脉冲 + IGBT　；参考：《吉林大学》2017年硕士论文

【摘要】：高压功率脉冲技术在工业、军事、环境保护等许多领域都有着广泛的应用。固体脉冲调制器是通过开关器件获得瞬间的大功率高压脉冲波形,因此开关器件的性能直接影响着固态脉冲调制器的输出信号脉宽、功率、瞬态等特性。传统的开关器件大多数是以氢闸流管为主的真空开关器件,这种器件虽然能够满足高频窄脉冲输出,但是它的体积大,效率低,并且较低的耐压、耐流值也限制了输出更高功率的信号。目前,绝缘栅极晶体管IGBT(Isolated Gate Bipolar Transistor)已成为脉冲调制器的理想开关器件。与传统真空开关器件相比,IGBT不仅在高重复频率的工作条件下有着更高的稳定性和更高的功率容量,还具有体积小、重量轻、驱动电路设计简单等优点。但是随着工业技术的发展,固态脉冲调制器的输出功率等级要求已经变得越来越高,单个IGBT的耐压值和耐流值却达不到设备使用的要求,也限制了IGBT的应用和发展,将多个IGBT通过串联或者并联组合使用的方式就可以提高整个开关的输出功率。但是这种方法又很容易引起开关运行不同步,严重时还会导致IGBT损坏。因此,研究串联均压技术和并联均流技术是解决IGBT串、并联扩容问题的关键。本文首先介绍了IGBT的工作原理以特性,在此基础上设计了一种高性能的采用EXB841驱动芯片的IGBT栅极驱动保护电路。接着从静态因素和动态因素两个方面分别分析IGBT串联组合和并联组合时的工作失衡问题,并使用栅极驱动端均压方法改善串联电压的分布不均,使用调节栅极电压方法改善并联电流的分布不均。本文完成了均压、均流实验电路的硬件电路设计,进行了开关特性测试,并从电路实验方面进一步对整体电路的性能进行验证。最后使多个串联IGBT电路工作在高压条件下,完成了串联均压实验电路的稳定性测试;多个并联IGBT电路在流过大电流条件下,完成并联均流电路验证。实验结果证明本文设计的IGBT均压、均流电路是可行的。大部分文献仅是通过软件仿真的方式分析串、并联电路的开关不平衡特性,本文通过制作硬件电路完成实验,验证了所设计的IGBT串联均压电路和并联均流电路中的开关特性和整体电路的稳定性,直观、经济、可靠地提高了IGBT的输出功率,为固态脉冲调制器输出更高功率脉冲电信号提供了实验基础。
[Abstract]:High-voltage power pulse technology has been widely used in many fields, such as industry, military, environmental protection and so on. The solid-state pulse modulator obtains instantaneous high-power and high-voltage pulse waveform by switching device, so the performance of switching device directly affects the pulse width, power and transient characteristics of the output signal of solid-state pulse modulator. Most of the traditional switch devices are vacuum devices with hydrogen thyratron. Although this kind of device can satisfy the high frequency and narrow pulse output, it has the advantages of large volume, low efficiency and low voltage resistance. Current resistance also limits the output of higher power signals. At present, the insulated gate transistor (IGBT(Isolated Gate Bipolar Transistor) has become the ideal switch device of pulse modulator. Compared with traditional vacuum switch devices, IGBT not only has higher stability and higher power capacity under high repetition rate, but also has the advantages of small volume, light weight and simple design of driving circuit. However, with the development of industrial technology, the output power level of solid-state pulse modulator has become more and more high. The voltage and current resistance of a single IGBT can not meet the requirements of the equipment, which limits the application and development of IGBT. The output power of the whole switch can be improved by combining multiple IGBT in series or parallel. However, this method can easily cause the switch to run out of sync and IGBT damage in serious cases. Therefore, the key to solve the problem of IGBT series and parallel expansion is to study the technology of series voltage sharing and parallel current sharing. This paper first introduces the working principle and characteristics of IGBT, and then designs a high performance IGBT gate drive protection circuit using EXB841 driver chip. Then the imbalance of IGBT series combination and parallel connection combination is analyzed from static and dynamic aspects, and the voltage sharing method of grid driver is used to improve the uneven distribution of series voltage. The method of adjusting gate voltage is used to improve the uneven distribution of parallel current. In this paper, the hardware circuit design of the voltage-sharing and current-sharing experimental circuit is completed, the switching characteristics are tested, and the performance of the whole circuit is further verified from the circuit experiment. Finally, several series IGBT circuits work under the condition of high voltage, and the stability test of the series voltage-sharing experiment circuit is completed, and the parallel current sharing circuit verification is completed for several parallel IGBT circuits under the condition of high current. The experimental results show that the IGBT circuit designed in this paper is feasible. Most of the literature is only through software simulation to analyze the switch imbalance of serial and parallel circuits. In this paper, the hardware circuit is made to complete the experiment. The switching characteristics and the stability of the whole circuit in the IGBT series voltage sharing circuit and the parallel current sharing circuit are verified. The output power of the IGBT is improved reliably and economically, which is intuitionistic, economical and reliable. It provides the experimental basis for the solid state pulse modulator to output higher power pulse signal.
【学位授予单位】：吉林大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8

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