GaAs基MMIC功率放大器的研制

发布时间：2018-05-22 11:21

本文选题：微波单片集成电路 + Ga　；参考：《西安电子科技大学》2015年硕士论文

【摘要】：微电子技术的发展水平和规模是衡量一个国家技术实力的重要标志。随着世界科学技术的发展,半导体技术一直的不断发展,有着高频特性、功率特性和低噪声特性等优点的微波单片集成电路(MMIC)因而得到广泛应用。微波单片集成电路是微波和毫米波通信、测绘等系统的核心元件。微波功率放大器在卫星通信、雷达、电子对抗等领域有着广泛的应用,MMIC微波功放的设计技术属于电子对抗的前沿技术之一。在现代无线通讯系统中,功率放大器起着非常重要的作用。新一代商用和军用通信系统都需要功率放大器。新兴的商业无线应用显著的提升了对功率放大器的研发。功率放大器在雷达和通信系统中是最重要的组成部分之一,砷化铟镓、砷化镓晶体管(p HEMT)具有高功率密度、高增益,这对于要求高效率,高功率,宽带操作,以及小尺寸如活性相雷达,未来的蜂窝,本地多点分配业务应用的优势(LMDS)和卫星通信来说是非常理想的应用材料,。单片微波集成电路(MMIC),用于功率放大器与多级结构的放大器制造可以进一步减小芯片尺寸,并增加了小信号增益,以减少制造成本。本论文题目是“Ga As基MMIC功率放大器的研制”,主要设计的是9.5-13.3GHz Ga As基MMIC功率放大器芯片。具体研究内容摘要如下:1.简单介绍了MMIC的发展背景、国内与国外的研究发展,功率放大器的性能参数与技术指标。2.通过对砷化镓赝配高电子迁移率晶体管器件的工作原理的分析,同时介绍了其简单的工艺流程,并对其小信号状态下的等效电路模型中的各项参数的提取办法进行简单陈述。3.针对单片微波集成电路中的各类无源元件,详细分析了它的等效电路模型及其各项技术指标的物理意义。4.介绍了功率放大器的基本设计思想,介绍了功率放大器芯片的探针台圆片测试和载体测试,给出了测试结果。
[Abstract]:The development level and scale of microelectronics technology is an important symbol to measure a country's technological strength. With the development of science and technology in the world, semiconductor technology has been continuously developed. Microwave monolithic integrated circuits (MMIC) with the advantages of high frequency characteristics, power characteristics and low noise characteristics have been widely used. Microwave monolithic integrated circuit is the core component of microwave and millimeter wave communication, mapping and other systems. Microwave power amplifier has been widely used in satellite communication, radar, electronic countermeasure and other fields. The design technology of MMIC microwave power amplifier is one of the frontier technologies of electronic countermeasure. Power amplifiers play a very important role in modern wireless communication systems. A new generation of commercial and military communication systems require power amplifiers. Emerging commercial wireless applications have significantly improved the development of power amplifiers. Power amplifiers are one of the most important components in radar and communication systems. InGaAs, gallium arsenide transistors (gallium arsenide transistors) have high power density and high gain, which requires high efficiency, high power and wide band operation. As well as small size such as active phase radar, future cellular, local multi-point distribution service applications advantage LMDS) and satellite communications are very ideal materials for applications. Monolithic microwave integrated circuit (MMIC) is used to fabricate power amplifier and multistage amplifier, which can further reduce the chip size and increase the small signal gain to reduce the manufacturing cost. The topic of this thesis is "Fabrication of GaAs based MMIC Power Amplifier", which is mainly designed for 9.5-13.3GHz GaAs based MMIC Power Amplifier chip. The specific contents of the study are summarized as follows: 1: 1. The development background of MMIC, the research and development at home and abroad, the performance parameters and technical index of power amplifier. Based on the analysis of the working principle of GaAs pseudo-electron mobility transistor device, the simple technological process is introduced, and the extraction method of the parameters in the equivalent circuit model under the small signal state is described briefly. Aiming at all kinds of passive components in monolithic microwave integrated circuit, the equivalent circuit model and the physical significance of each technical index are analyzed in detail. The basic design idea of power amplifier is introduced in this paper. The probe chip and carrier test of power amplifier chip are introduced, and the test results are given.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75

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