功率半导体器件失效模型多物理场仿真分析

发布时间：2018-05-25 10:04

本文选题：多物理场计算 + 功率半导体器件　；参考：《华北电力大学》2015年硕士论文

【摘要】：功率半导体器件是进行电能(功率)处理的半导体产品,是弱电控制与强电运行间的桥梁。随着绿色环保意识在国际间的确立与推进,功率半导体的应用范围己从传统的工业控制和4C产业(计算机、通信、消费类电子产品和汽车),扩展到新能源(风电、太阳能)、轨道交通、智能电网等新领域。随着对功率器件需求的不断扩大,对功率器件的失效分析和可靠性研究需要更加深入和广泛的研究。在功率半导体器件知识的基础上,并且结合对于PT-IGBT的认识,本文从固态半导体载流子运动的理论出发,借助外文文献中关于Si半导体材料特性的实验数据结果提出合理失效机理假设。主要工作包括对外文文献中的材料参数的数据处理选择合理的迁移率模型；通过多物理场建模仿真双极型晶体管BJT及单极型器件MOSFET的导通伏安特性曲线,帮助分析PT-IGBT在导通状态下的温度特性；对PT-IGBT的多元胞并联可能发生的失效机理进行验证和阐述；建立IGBT动态关断瞬时失效模型,仿真有源区内部材料参数变化缺陷对击穿电压阈值的影响。以上为基础分析IGBT从导通到关断时可能出现的失效机理,提出IGBT使用过程中应注意不超过di/dt和du/dt耐量,最后总结归纳功率半导体器件的常见失效模式。
[Abstract]:Power semiconductor devices are semiconductor products for power (power) processing and a bridge between weak current control and strong power operation. With the establishment and promotion of green environmental awareness in the international community, the application of power semiconductors has expanded from traditional industrial control and 4C industries (computers, communications, consumer electronics and automotive products) to new sources of energy (wind power, wind power). Solar energy, rail transit, smart grid and other new areas. With the increasing demand for power devices, the research on failure analysis and reliability of power devices needs more in-depth and extensive research. Based on the knowledge of power semiconductor devices and the understanding of PT-IGBT, this paper starts from the theory of solid state semiconductor carrier motion. Based on the experimental data of Si semiconductor material in foreign literature, the hypothesis of reasonable failure mechanism is put forward. The main work includes selecting a reasonable mobility model for data processing of material parameters in foreign literature, simulating the on-volt-ampere characteristic curves of bipolar transistor BJT and unipolar device MOSFET by multi-physical field modeling. It helps to analyze the temperature characteristics of PT-IGBT in the state of conduction, to verify and explain the failure mechanism of PT-IGBT in parallel, and to establish a dynamic turn-off transient failure model of IGBT. The influence of material parameter variation on breakdown voltage threshold in active region is simulated. Based on the above analysis, the possible failure mechanism of IGBT from conduction to turn-off is analyzed, and it is proposed that attention should be paid to not exceeding the di/dt and du/dt tolerance in the use of IGBT. Finally, the common failure modes of power semiconductor devices are summarized.
【学位授予单位】：华北电力大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN303

【引证文献】