不同氟源对FTO薄膜结构和性能的影响

发布时间：2018-05-25 20:39

  本文选题：二氧化锡薄膜 + 掺杂　； 参考：《燕山大学学报》2017年04期

【摘要】：采用喷雾热解法制备了氟掺杂的二氧化锡(fluorine-doped tin oxide,FTO)薄膜,氟源分别为NH_4F、SnF_2、CF_3COOH和HF。采用X射线衍射仪、扫描电子显微镜对薄膜微观结构和表面形貌进行了表征;用四探针电阻仪、霍尔效应仪和紫外分光光度计对薄膜的光电性能进行了分析。结果表明,不同氟源制备的FTO薄膜均为沿(200)方向择优生长的四方金红石结构,掺杂后薄膜的表面形貌较未掺杂时变化较大,由多角状和棱柱状颗粒相间分布变为完全由类金字塔状颗粒堆积而成。四种氟源中,以SnF_2为氟源制备的FTO薄膜的光电性能优于其它氟源,薄膜的最佳电阻率达5.06×10~(-4)Ωcm,载流子浓度为4.850×10~(20)cm~(-3),光学带隙为4.03 eV。不同氟源对FTO薄膜可见光区透过率影响不大,薄膜的平均透过率均大于83%。不同氟源FTO薄膜的性能差异主要由氟的掺杂量决定的。
[Abstract]:The fluorine doped tin oxide (fluorine-doped tin oxide, FTO) film was prepared by spray pyrolysis. The fluorine source was NH_4F, SnF_2, CF_3COOH and HF. using X ray diffractometer. The microstructure and surface morphology of the film were characterized by scanning electron microscope. The film was made by four probe resistance apparatus, Holzer effect instrument and ultraviolet spectrophotometer. The results show that the FTO films prepared by different fluorine sources are tetragonal rutile structures with preferred growth in the direction of (200). After doping, the surface morphology of the films varies greatly, and the interphase distribution of polyangular and prism particles becomes completely from the Pyramid like particles. In four kinds of fluorine sources, The photoelectric properties of FTO films prepared by SnF_2 for fluorine source are superior to other fluorine sources. The optimum resistivity of the films is 5.06 x 10~ (-4) Omega cm, the carrier concentration is 4.850 x 10~ (20) cm~ (-3), and the optical band gap is 4.03 eV. different fluorine sources have little influence on the transmittance of the visible region of FTO thin film, and the average transmittance of thin film is greater than that of 83%. fluorine source FTO thin film. The difference is mainly determined by the amount of fluorine doping.
【作者单位】： 燕山大学材料科学与工程学院;唐山学院环境与化学工程系;燕山大学国防科学技术学院;
【基金】：国家重点研发计划资助项目(2016YFB0303902) 河北省应用基础研究计划重点基础研究资助项目(17961109D) 国家自然科学基金资助项目(51602278) 河北省自然科学基金资助项目(E2016203149)
【分类号】：TN304
，

本文编号：1934599