选择性穿透阳极氧化工艺的三维铝封装技术研究

发布时间：2018-05-25 19:42

本文选题：微系统 + 三维铝封装　；参考：《电子元件与材料》2016年12期

【摘要】：针对微系统高可靠集成需求,提出了一种三维铝封装集成微系统多功能器件的结构和方法。通过铝基板选择性穿透阳极氧化试验、低应力低空洞灌封试验和激光侧边电路刻蚀试验,实现了32 G固态存储器集成。研究结果表明,通过致密性氧化可实现内埋布线氧化终点的控制,采用阶梯式固化可降低灌封应力,优化的激光参数可获得侧边电路互连。首批试制固态存储器读写性成品率达73%,与同类3D-plus存储器相比,体积减少约55%,质量减轻约40%。
[Abstract]:In order to meet the requirement of high reliability integration of microsystems, this paper presents a structure and method of multifunctional devices for integrated microsystems with three dimensional aluminum packaging. Through selective anodic oxidation test of aluminum substrate, low stress and low cavity filling test and laser side circuit etching test, 32G solid state memory integration is realized. The results show that the end point of buried wiring oxidation can be controlled by densification oxidation, the filling stress can be reduced by step solidification, and the side circuit interconnection can be obtained by optimizing laser parameters. Compared with the similar 3D-plus memory, the volume and quality of the first batch of solid state memory reader-write finished products are reduced by 55 and 40 parts respectively.
【作者单位】：上海航天电子通讯设备研究所;
【基金】：国家科技重大专项项目(课题级)(No.2014ZX02501016)
【分类号】：TN405

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