与标准Si工艺兼容的光电探测器的研制

发布时间：2018-05-25 21:23

本文选题：集成光电子技术 + 光电探测器　；参考：《光电子·激光》2017年02期

【摘要】：提出采用Si基标准工艺进行研制与标准工艺兼容的光敏三极管,重点解决光敏三极管结构与标准工艺兼容性问题,并实现对其结构、性能的优化设计。通过CADENCE软件,画出不同光敏三极管的版图;根据华润上华(CSMC)Si基标准工艺流程,采用器件模拟软件Silvaco,对光敏三极管结构进行构建和仿真;基于理论分析结果,通过设计改变结构优化光敏三极管性能。采用CSMC标准Si工艺,实现了基区面积分别为40μm×40μm、50μm×100μm、80μm×100μm和100μm×100μm光敏三极管的流片、封装和测试。结果显示,所设计的光敏三极管的响应度达到2.02A/W,放大倍数β达到60倍,最大带宽达到50 MHz左右。并且,标准Si工艺的低成本和放大集成电路的兼容性,使得制备的光敏三极管可以广泛适用于快速光耦合器、光数据接收器等应用领域。
[Abstract]:The Guang Min Triode compatible with the standard process is developed by using the Si-based standard process. The problem of compatibility between the structure of the Guang Min Triode and the standard process is emphatically solved, and the optimum design of its structure and performance is realized. The layout of different Guang Min transistors is drawn by CADENCE software, and the structure of Guang Min transistors is constructed and simulated by using the device simulation software Silvaco, according to the standard technological process of CSMC Si based on CSMC, based on the theoretical analysis results, The performance of Guang Min Triode is optimized by changing the structure. Using the CSMC standard Si process, the wafer, packaging and testing of a 40 渭 m 脳 40 渭 m base area 50 渭 m 脳 100 渭 m Guang Min transistor with 80 渭 m 脳 100 渭 m and 100 渭 m 脳 100 渭 m Guang Min transistors have been realized. The results show that the designed Guang Min transistor has a responsivity of 2.02A / W, a magnification of 60 times and a maximum bandwidth of about 50 MHz. Moreover, the low cost of standard Si process and the compatibility of amplifier IC make the fabricated Guang Min transistor widely applicable to fast optical coupler, optical data receiver and other applications.
【作者单位】：厦门大学航空与航天学院;阜阳师范学院计算机与信息工程学院;厦门大学物理科学与技术学院;
【基金】：国家自然科学基金(61205060) 安徽省高校省级自然科学基金(2014KJ022) 安徽省自然科学基金(608085QF159) 厦门大学校长基金(中央高校基本科研业务费专项资金)(20720160016)资助项目
【分类号】：TN15

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