应用于电阻阵列像素单元过驱动技术的研究

发布时间：2018-05-25 23:02

本文选题：过驱动技术 + 像素级　；参考：《中国科学院研究生院(上海技术物理研究所)》2015年硕士论文

【摘要】：电阻阵微辐射体电阻的热响应时间是制约电阻阵帧频的主要因素之一,为提高微辐射体电阻热响应时间,引入过驱动技术。为节省系统开支和成本,本文提出在像素单元实现过驱动的方式,并对该方式进行了验证。本文的起始对国内外电阻阵过驱动技术进行了调研,提出了一种节省系统成本,在像素单元实现过驱动技术的方式,该方式采用开环的控制方式。对微辐射体电阻的热平衡方程进行分析,推导出微辐射体电阻过驱动技术的理论表达式。建立了微辐射体电阻热响应时间和微辐射体外部驱动功率之间的关系,为研究像素单元过驱动技术提供了理论依据。为进一步的研究像素单元过驱动技术,提出了施加在微辐射体电阻外部热驱动的波形要求,过驱动因子Kod的选值以及像素单元面积的限制对电路设计要求。随后,按照要求设计了应用于研究像素单元过驱动技术的电路结构。对电路结构设计进行了详细的参数设计,仿真和版图设计,选用CSMC 0.5μm工艺对电路进行流片。最后搭建了用于测试电路功能的系统,对应用于研究像素单元过驱动技术的电路设计进行了验证。最后,搭建了测试像素单元过驱动技术的系统,分析了验证过驱动技术的方法,并对应用于测试的Ti NX材料的微辐射体电阻进行了温度特性的测量,随后对像素单元过驱动技术进行了测试,对测试结果表现出的误差进行了误差分析,并提出改进测试的方案。随着文章的结束,文章末尾对像素单元过驱动技术的应用进行了展望。
[Abstract]:The thermal response time of resistor array micro-radiator resistor is one of the main factors that restrict the frame frequency of resistor array. In order to improve the thermal response time of micro-radiator resistor, overdrive technology is introduced. In order to save system expenses and cost, this paper proposes an overdrive mode in pixel unit and verifies the method. At the beginning of this paper, the overdrive technology of resistive array at home and abroad is investigated, and a way of realizing over-drive technology in pixel unit is put forward, which adopts open-loop control mode. The heat balance equation of micro-radiator resistor is analyzed and the theoretical expression of over-drive technique of micro-radiator resistor is deduced. The relationship between the thermal response time of micro-radiator resistor and the external driving power of micro-radiator is established, which provides a theoretical basis for the study of pixel over-drive technology. In order to further study the over-drive technology of pixel unit, the waveform requirement applied to the external thermal drive of micro-radiator resistor, the selection value of over-drive factor Kod and the limitation of pixel cell area on the circuit design are proposed. Then, according to the requirements, the circuit structure is designed to study the pixel unit overdrive technology. Detailed parameter design, simulation and layout design are carried out for the circuit structure design. CSMC 0.5 渭 m process is used to carry out the circuit chip. Finally, a system is built to test the function of the circuit, and the design of the circuit applied to the research of the pixel unit overdrive technology is verified. Finally, a system for testing the over-drive technology of pixel unit is built, and the method to verify the over-drive technique is analyzed, and the temperature characteristics of the micro-radiator resistor of the Ti NX material used in the test are measured. Then, the pixel unit overdrive technology is tested, the error of the test result is analyzed, and the scheme of improving the test is put forward. With the end of the article, the application of the pixel unit overdrive technology is prospected at the end of the article.
【学位授予单位】：中国科学院研究生院(上海技术物理研究所)
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN219

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