磁控溅射法制备硅碳氮薄膜及其性能研究

发布时间：2018-05-25 23:24

  本文选题：SiCN + 磁控溅射　； 参考：《西北大学》2017年硕士论文

【摘要】：硅碳氮(SiCN)是一种硅、碳、氮三元化合物半导体材料,兼具碳化硅和氮化硅两种材料优良的光学、电学、磁学、热力学和机械特性。在硅材料衬底上生长SiCN薄膜材料成本低,且与超大规模集成电路有很好的兼容性,这些特点使得SiCN可作为光电器件的首选材料之一,具有很好的经济和社会效益。本论文采用射频磁控溅射法,以氮化硅和石墨靶材作为原材料,氩气作为工作气体,成功制备出了 SiCN薄膜材料。通过改变靶材(氮化硅、石墨)溅射功率、衬底温度和反应腔室压强等制备条件,利用相应测试手段分析研究了制备工艺条件对SiCN薄膜在组分、结构、形貌、光学性能和场发射性能等方面的影响。另外,我们进一步探索性地研究了退火对SiCN薄膜的影响。结果表明,在不同工艺条件下所制备的SiCN薄膜主要是由Si、N、C三种元素组成,元素以Si-N键、Si-C键、C-N键、C=N键、C≡N键和C=C键存在,薄膜材料中含Si3N4、5H-SiC相。不同的制备工艺条件对各元素含量和结晶性都有很大的影响。通过改变靶材溅射功率,我们发现所制备SiCN薄膜材料光学带隙随着靶材溅射功率的增大而增大,通过计算可得其光学带隙介于4.55和4.89 eV之间,且薄膜有很好的光透过性;随着衬底温度从400℃升高到700℃,所制备SiCN薄膜的光学带隙从4.20 eV减小到3.73 eV;腔室压强从3 Pa增大至9 Pa时,所制备SiCN薄膜的光学带隙从3.06 eV增大到5.14 eV。光致荧光测试结果表明所制备SiCN薄膜有两个分别位于370和425nm处的发光峰,分别由SiOx/Si(0x≤2)界面态和SiC晶粒引起,发光峰的强度随制备条件的不同而有很大的差别。薄膜的场发射测试表明,薄膜的场发射开启电场随靶材溅射功率的不同有较大的变化,所制备薄膜的最小开启电场为2.4 V/μm。
[Abstract]:Silicon carbon nitride (sic) is a kind of silicon, carbon, nitrogen ternary compound semiconductor material, which has excellent optical, electrical, magnetic, thermodynamic and mechanical properties of both silicon carbide and silicon nitride. SiCN thin films grown on silicon substrates have low cost and good compatibility with VLSI. These characteristics make SiCN as one of the preferred materials for optoelectronic devices with good economic and social benefits. In this paper, SiCN thin films were successfully prepared by RF magnetron sputtering, using silicon nitride and graphite targets as raw materials and argon as working gas. By changing the sputtering power of target (silicon nitride, graphite), substrate temperature and pressure of reaction chamber, the effects of preparation conditions on the composition, structure and morphology of SiCN thin films were studied by means of measurement. The effects of optical properties and field emission properties. In addition, we investigated the effect of annealing on SiCN films. The results show that the SiCN thin films prepared under different processing conditions are mainly composed of three elements, Si-Na-C, Si-C, C-N, C-N and C3N4- 5H-SiC, and the Si _ 3N _ 4 and 5H-SiC phases are found in the films. Different preparation conditions have great influence on the content and crystallinity of each element. By changing the sputtering power of the target, we found that the optical band gap of the SiCN thin film increases with the increase of the target sputtering power. The optical band gap is between 4.55 and 4.89 EV, and the film has good optical transmittance. With the increase of substrate temperature from 400 鈩，

本文编号：1935048