基于毫米级单晶石墨烯的倍频器性能研究

发布时间：2018-05-26 15:22

本文选题：单晶石墨烯 + 倍频器　；参考：《物理学报》2017年21期

【摘要】：石墨烯作为一种拥有高电子迁移率和高饱和速度的二维材料,在射频电子学领域具有很大的应用潜力,引起了人们广泛的研究兴趣.近些年随着化学气相沉积制备石墨烯技术的发展,高质量大尺寸的单晶石墨烯生长技术也愈加成熟.本文基于化学气相沉积生长的毫米级单晶石墨烯,在高介电常数介质上制备出高性能的石墨烯倍频器,并且对其倍频特性做了系统的研究.研究结果表明:在输入信号频率为1 GHz时,倍频增益可以达到-23.4 dB,频谱纯度可以达到94%.研究了不同漏极偏压以及输入信号功率下倍频增益的变化特性,随着漏极偏压以及输入信号功率的增加,倍频增益增加.对具有不同跨导和电子空穴电导对称性的器件的倍频增益和频谱纯度随输入信号频率f_(in)的变化关系进行了研究.结果表明,跨导对于倍频增益影响显著,在f_(in)=1 GHz时器件的频谱纯度差别不大,均大于90%,但是随着f_(in)增加至4 GHz,电子空穴电导对称性较差的器件频谱纯度下降至42%,电子空穴电导对称性较好的器件仍能保持85%的频谱纯度.这是电子空穴电导对称性和电子空穴响应速度共同作用的结果.本文的研究结果对于高性能石墨烯倍频器设计具有一定的指导意义.
[Abstract]:Graphene, as a two-dimensional material with high electron mobility and high saturation velocity, has great application potential in the field of radio-frequency electronics. In recent years, with the development of the technology of preparing graphene by chemical vapor deposition, the growth technology of high quality and large size single crystal graphene has become more and more mature. In this paper, based on millimeter single crystal graphene grown by chemical vapor deposition, a high performance graphene frequency multiplier is prepared in high dielectric constant medium, and its frequency doubling characteristics are systematically studied. The results show that when the input signal frequency is 1 GHz, the frequency doubling gain can reach -23.4 dB, and the spectral purity can reach 94. 4 dB. The characteristics of frequency doubling gain under different drain bias and input signal power are studied. The frequency doubling gain increases with the increase of drain bias and input signal power. The relationship between the frequency doubling gain and the spectral purity of the devices with different transconductance and electron hole conductance symmetry is studied. The results show that transconductance has a significant effect on the frequency doubling gain, and the spectral purity of the device is not different when f_(in)=1 GHz is used. All of them are larger than 90, but with the increase to 4 GHz, the spectral purity of the devices with poor electron-hole conductance symmetry decreases to 42, and the devices with better electron-hole conductance symmetry can still maintain the spectral purity of 85%. This is the result of the interaction of electron hole conductance symmetry and electron hole response velocity. The results of this paper have certain guiding significance for the design of high performance graphene doubler.
【作者单位】：华中科技大学光学与电子信息学院;华中科技大学国家脉冲强磁场科学中心(筹);
【基金】：国家自然科学基金(批准号:61390504,61574066,11404118)资助的课题~~
【分类号】：TN771

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