黑磷的电学性能调控及其逻辑器件的制备与表征

发布时间：2018-05-26 18:37

本文选题：黑磷 + PMMA　；参考：《中国科学院大学(中国科学院物理研究所)》2017年博士论文

【摘要】：近年来,薄层黑磷作为场效应晶体管的沟道材料显示出高开关比和高迁移率的特性,引起研究者的普遍关注。研究表明黑磷是一种P型半导体,类似于石墨烯,它具有褶皱的层状结构,块体结构的带隙约为0.3 eV,带隙随着块体所含有原子层层数的减少而增加,单层黑磷的带隙约为1.8 eV。室温下,空穴的载流子迁移率可以接近1000 cm2V-1S-1,具有各项异性的电学输运特性和光电特性。由于黑磷具有如此多优良的特性,人们基于黑磷已经制备了各种器件如:场效应晶体管,光晶体管,异质结,气体感应器和CMOS等。然而,黑磷材料在空气中容易吸收空气中的水和氧气而发生变质,导致其电学性能大大降低,另外本征黑磷为空穴掺杂的双极型半导体材料,为了将黑磷应用于未来逻辑电路,人们需要一种稳定的掺杂手段,将P型黑磷转变为N型黑磷,以便充分利用黑磷优良的电学特性来制备基于黑磷的逻辑电路。因此,本论文将针对黑磷空气中的不稳定性及互补掺杂等问题展开研究工作,主要结果如下:1.利用过曝PMMA对黑磷器件进行保护,发现过曝PMMA对黑磷的掺杂效应。改变过曝电子束的计量,来研究过曝PMMA掺杂性能的变化,进而利用这种掺杂效应来对黑磷进行选择性掺杂,从而制备一系列黑磷平面器件。2.对黑磷掺杂机理进行进一步研究,并成功应用于其它二维半导体材料。3.利用双栅极器件结构,在同一个器件上既实现双向整流器件的功能,又实现极性可控晶体管的功能,这对于未来器件集成及相应逻辑设计具有一定的推动作用。4.通过机械剥离的方式,将黑磷少层样品转移到化学气相沉积生长在硅片表面的石墨烯上,形成黑磷-石墨烯异质结,并对异质结的电学特性进行分析,发现石墨烯可以很好的作为少层黑磷器件的接触电极。
[Abstract]:In recent years, thin layer black phosphorus, as a channel material of FET, has shown the characteristics of high switching ratio and high mobility, which has attracted the attention of researchers. The results show that black phosphorus is a P-type semiconductor, similar to graphene. It has a folded layered structure. The band gap of bulk structure is about 0.3 EV, and the band gap increases with the decrease of atomic layers in bulk, and the band gap of monolayer black phosphorus is about 1.8 EV. At room temperature, the carrier mobility of the hole can be close to 1000 cm2V-1S-1, which has various heterosexual electrical transport characteristics and optoelectronic properties. Because black phosphorus has so many excellent properties, various devices such as field effect transistor, phototransistor, heterojunction, gas sensor and CMOS have been fabricated based on black phosphorus. However, the black phosphorus material is easy to absorb water and oxygen in the air, which leads to the deterioration of its electrical properties. In addition, the intrinsic black phosphorus is a hole-doped bipolar semiconductor material, in order to apply black phosphorus to the future logic circuits. A stable doping method is needed to convert P-type black phosphorus to N-type black phosphorus in order to make full use of the excellent electrical properties of black phosphorus to fabricate the logic circuits based on black phosphorus. Therefore, this thesis will focus on the instability and complementary doping in black phosphorus air. The main results are as follows: 1. The over-exposed PMMA is used to protect the black phosphorus device and the doping effect of over-exposed PMMA on black phosphorus is found. The change of doping properties of overexposed PMMA was studied by changing the measurement of overaerated electron beam, and then the black phosphorus was selectively doped by this doping effect, and a series of black phosphorus planar devices. 2. The mechanism of black phosphorus doping was further studied and successfully applied to other two-dimensional semiconductor materials. 3. Using double gate device structure, the function of bidirectional rectifier and polarity controllable transistor can be realized on the same device, which will promote device integration and corresponding logic design in the future. The black phosphorus thin layer sample was transferred to the graphene deposited on the surface of silicon wafer by mechanical stripping to form the black phosphorus-graphene heterojunction, and the electrical properties of the heterojunction were analyzed. It is found that graphene can be used as a contact electrode for less layer black phosphorus devices.
【学位授予单位】：中国科学院大学(中国科学院物理研究所)
【学位级别】：博士
【学位授予年份】：2017
【分类号】：TN304.17

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