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高速数字电路的微波扰乱及电磁防护

发布时间:2018-05-28 00:35

  本文选题:高功率微波 + 扰乱效应 ; 参考:《华北电力大学》2015年硕士论文


【摘要】:随着现代电子技术的快速发展,高速数字电路系统设计已成为当今电子设计的主流,复杂的电磁环境对高速、高密度和系统化的数字电路系统的影响日益显著,导致电子系统和设备的正常工作受到扰乱、中断、甚至敏感器件永久毁伤。为了避免上述情况,需要深入研究微波干扰信号对高速数字电路系统产生影响的过程、机制及防护。考虑到高速数字电路系统的复杂性,因此有必要对高速数字电路系统的基本电路单元进行微波扰乱效应的研究。本文以CMOS反相器为研究对象,首先根据电磁场耦合理论,建立了高功率(HPM)辐照下电磁干扰的等效源模型,设计了采用直接注入法注入微波干扰信号的阻抗匹配电路,进而模拟了不同频率、功率微波干扰对CMOS反相器的影响,总结了相应的效应规律,为研究复杂CMOS电路的效应规律提供一定参考。其次,采用了一种基于负载特性的动态参数新计算方法,计算了微波干扰下CMOS反相器的输出电压、输出电流、功耗等关键动态参数的变化,深刻揭示了微波干扰信号对CMOS反相器的影响机制。最后,搭律了电磁屏蔽材料的屏蔽效能测试系统,更为真实的评价了两种典型屏蔽材料的电磁屏蔽效能,该测试系统具有较强的操作性,对微波防护的研究具有一定的实用价值。本文对CMOS反相器微波扰乱效应的模拟方法及基于负载特性的动态参数计算,能够准确的分析微波干扰信号对数字电路的扰乱效应,并揭示其影响机制,可应用于其它基本电路单元微波扰乱效应的分析,为下一步研究复杂高速数字电路系统的微波扰乱效应奠定基础。
[Abstract]:With the rapid development of modern electronic technology, high-speed digital circuit system design has become the mainstream of electronic design. The complex electromagnetic environment has an increasingly significant impact on high-speed, high-density and systematic digital circuit systems. Causes the normal operation of electronic systems and equipment to be disturbed, interrupted, and even permanent damage sensitive devices. In order to avoid the above situation, it is necessary to study the process, mechanism and protection of microwave interference signal influence on high-speed digital circuit system. Considering the complexity of the high-speed digital circuit system, it is necessary to study the microwave disturbance effect of the basic circuit unit of the high-speed digital circuit system. In this paper, the CMOS inverter is taken as the research object. Firstly, according to the electromagnetic field coupling theory, the equivalent source model of electromagnetic interference under high power HPM irradiation is established, and the impedance matching circuit of the microwave interference signal injected by direct injection method is designed. The influence of different frequency and power microwave interference on CMOS inverter is simulated, and the corresponding effect law is summarized, which provides a certain reference for studying the effect law of complex CMOS circuit. Secondly, a new calculation method based on load characteristic is used to calculate the key dynamic parameters of CMOS inverter under microwave interference, such as output voltage, output current, power consumption and so on. The influence mechanism of microwave interference signal on CMOS inverter is revealed. Finally, the shielding effectiveness test system of electromagnetic shielding material is introduced, and the electromagnetic shielding effectiveness of two typical shielding materials is evaluated more truthfully. The test system has strong maneuverability. The study of microwave protection has certain practical value. In this paper, the simulation method of microwave disturbance effect of CMOS inverter and the calculation of dynamic parameters based on load characteristics can accurately analyze the disturbance effect of microwave interference signal to digital circuit and reveal its influence mechanism. It can be applied to the analysis of microwave disturbance effect in other basic circuit units, which lays a foundation for the further study of microwave disturbance effect in complex high-speed digital circuit systems.
【学位授予单位】:华北电力大学
【学位级别】:硕士
【学位授予年份】:2015
【分类号】:TN79

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